SMF17CA

Marking：17CA；Package：SOD-123FL；Surface Mount Transient Voltage Suppressor

Features ●Forsurfacemountedapplications ●Low-profilepackage ●Idealforautomatedplacement ●AvailableinUnidirectionalandBidirectional ●200Wpeakpulsepowercapabilitywitha10/1000μs waveform ●Lowincrementalsurgeresistance,excellentclamping capability ●Veryfastre

SPA17N80C3

Marking：17N80C3；Package：TO-220-3-31；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

SPP17N80C3

Marking：17N80C3；Package：TO-220；Cool MOS??Power Transistor

Feature •Newrevolutionaryhighvoltagetechnology •WorldwidebestRDS(on)inTO220 •Ultralowgatecharge •Periodicavalancherated •Extremedv/dtrated •Ultraloweffectivecapacitances •Improvedtransconductance •PG-TO-220-3-31:Fullyisolatedpackage(2500VAC;1minute) •Pb

STB17N80K5

Marking：17N80K5；Package：D2PAK；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a D²PAK package

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

STF17N80K5

Marking：17N80K5；Package：TO-220FP；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220FP package

Features Industry’slowestRDS(on)xarea Industry’sbestfigureofmerit(FoM) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

STI175N4F6AG

Marking：175N4F6；Package：I2PAK；Automotive-grade N-channel 40 V, 2.1 mΩ typ., 120 A STripFET™ F6 Power MOSFET in an I²PAK package

Features Designedforautomotiveapplicationsand AEC-Q101qualified Verylowon-resistance Verylowgatecharge Highavalancheruggedness Lowgatedrivepowerloss Applications Switchingapplications Powertools Description ThisdeviceisanN-channelPowerMOSFET

STP17N80K5

Marking：17N80K5；Package：TO-220；N-channel 800 V, 0.29 Ω typ., 14 A MDmesh™ K5 Power MOSFET in a TO-220 package

Features Industry’slowestRDS(on)xarea Industry’sbestFoM(figureofmerit) Ultra-lowgatecharge 100avalanchetested Zener-protected Applications Switchingapplications Description ThisveryhighvoltageN-channelPower MOSFETisdesignedusingMDmesh™K5 technolog

TMP175AQDGKRQ1

Marking：175Q；Package：VSSOP；TMPx75-Q1 Automotive Grade Temperature Sensor With I2C and SMBus Interface in Industry-Standard LM75 Form Factor and Pinout

1Features 1•AEC-Q100Qualifiedwith: –TemperatureGrade1:–40°Cto+125°C AmbientOperationTemperatureRange –HBMESDClassificationLevel2 –CDMESDClassificationLevelC6 •TMP175-Q1Accuracy: –±1°C(Typical)from–40°Cto+125°C ±2°C(Maximum)from–40°Cto+125°C •TMP75-Q1

TPS61253AYFFR

Marking：17NI；Package：DSBGA；TPS61253A, TPS61253E 3.8-MHz, 5-V, 4-A Boost Converter in 1.2-mm x 1.3-mm WCSP

1Features •Wideinputvoltagerangefrom2.3Vto5.5V (TPS61253A) •Wideinputvoltagerangefrom2.5Vto5.5V (Startup>2.6V,TPS61253E) •Fixedoutputvoltage:4.5/4.7/5.0/5.2V/5.25V •TwoFETsintegrated:35-mΩLS-FET,60-mΩHSFET •IOUT≥1500-mAcontinuouslyatVOUT=5

TPS61253AYFFT

Marking：17NI；Package：DSBGA；TPS61253A, TPS61253E 3.8-MHz, 5-V, 4-A Boost Converter in 1.2-mm x 1.3-mm WCSP

1Features •Wideinputvoltagerangefrom2.3Vto5.5V (TPS61253A) •Wideinputvoltagerangefrom2.5Vto5.5V (Startup>2.6V,TPS61253E) •Fixedoutputvoltage:4.5/4.7/5.0/5.2V/5.25V •TwoFETsintegrated:35-mΩLS-FET,60-mΩHSFET •IOUT≥1500-mAcontinuouslyatVOUT=5