首页 >15GN01C-E>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
NPNEpitaxialPlanarSiliconTransistorVHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications VHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications Features •SmallON-resistance[Ron=2Ω(IB=3mA)]. •Smalloutputcapacitance[Cob=1.05pF(VCB=10V)]. •Ultrasmallpackagepermittingappliedsetstobesmallandslim. •Halogenfreecompliance. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
VHFtoUHFBandHigh-frequencySwitching,HighfrequencyGeneral-PurposeAmplifierApplications VHFtoUHFBandHigh-frequencySwitching,High-frequencyGeneral-PurposeAmplifierApplications Features •SmallON-resistance[Ron=2Ω(IB=3mA)]. •Smalloutputcapacitance[Cob=1.1pF(VCB=10V)]. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
VHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications VHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications Features •SmallON-resistance[Ron=2Ω(IB=3mA)] •Smalloutputcapacitance[Cob=1.1pF(VCB=10V)] | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
RFTransistor8V,50mA,fT=1.5GHz,NPNSingleMCP RFTransistor8V,50mA,fT=1.5GHz,NPNSingleMCP Features •SmallON-resistance[Ron=2Ω(IB=3mA)] •Smalloutputcapacitance[Cob=1.1pF(VCB=10V)] | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
RFTransistor8V,50mA,fT=1.5GHz,NPNSingleMCP RFTransistor8V,50mA,fT=1.5GHz,NPNSingleMCP Features •SmallON-resistance[Ron=2Ω(IB=3mA)] •Smalloutputcapacitance[Cob=1.1pF(VCB=10V)] | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
VHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
NPNEpitaxialPlanarSiliconTransistorVHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications VHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications Features •SmallON-resistance[Ron=2Ω(IB=3mA)]. •Smalloutputcapacitance[Cob=1.3pF(VCB=10V)]. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO | ||
NPNEpitaxialPlanarSiliconTransistorVHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications VHFtoUHFBandHigh-FrequencySwitching,High-FrequencyGeneral-PurposeAmplifierApplications Features •SmallON-resistance[Ron=2Ω(IB=3mA)]. •Smalloutputcapacitance[Cob=1.0pF(VCB=10V)]. •Ultrasmallpackagepermittingappliedsetstobesmallandslim. | SANYOSanyo Semicon Device 三洋三洋电机株式会社 | SANYO |
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