DATA SUBJECT TO CHANGE WITHOUT NOTLCE

文件：240.27 Kbytes 页数：1 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

Coffret pour composants en acier doux de type 1

文件：104.6 Kbytes 页数：2 Pages

HAMMONDHammond Manufacturing Company Limited

哈蒙德哈蒙德制造有限公司

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX STEEL GRAY 10\

Hammond Manufacturing

包装：散装 类别：盒子，外壳，机架 箱 描述：BOX STEEL GRAY 10\

Hammond Manufacturing

RF/Microwave GaN on SiC Power Devices, Pallets and Modules

The 1416GN-120E/EL/EP is an internally matched, common source, Class AB, GaN on SiC HEMT transistor capable of providing over 17 dB typical power gain, 120 W of pulsed RF output power under 300 ?S pulse width and 10% long term duty cycle pulsing across the 1400 MHz to 1600 MHz band. The transist

Microchip

微芯科技