13003CDH中文资料NPN SILICON POWER TRANSISTOR数据手册UTC规格书

描述 Description

These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch mode.

特性 Features

· Reverse biased SOA with inductive load @ TC=100°C
· Inductive switching matrix 0.5 ~ 1.5 Amp, 25 and 100°C  Typical tC = 290ns @ 1A, 100°C.
· 900V blocking capability