AMC1303M2520DWVR

Marking：1303M252；Package：SOIC；AMC1303x Small, High-Precision, Reinforced Isolated Delta-Sigma Modulators With Internal Clock

1Features •Pin-compatiblefamilyoptimizedforshunt-resistorbased currentmeasurements: –±50mVor±250mVinputvoltageranges –Manchester-codedoruncodedbitstream options –10MHzand20MHzclockoptions •ExcellentDCperformance: –Offseterror:±50μVor±100μV(max) –Offsetdrif

AMC1306M05QDWVRQ1

Marking：1306M05Q；Package：SOIC；AMC1306M05-Q1 Automotive, High-Precision, 짹50-mV Input, Reinforced Isolated Delta-Sigma Modulator

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Linearinputvoltagerange:±50mV •LowDCerrors: –Offseterror:±50μV(max) –Offset

AMC1306M25EDWVR

Marking：1306M25E；Package：SOIC；AMC1306M25E High-Precision, Reinforced Isolated Delta-Sigma Modulator With –55°C Extended Temperature Range

1Features •Linearinputvoltagerange:±250mV •LowDCerrors: –Offseterror:±100μV(max) –Offsetdrift:1μV/°C(max) –Gainerror:±0.2(max) –Gaindrift:±40ppm/°C(max) •HighCMTI:100kV/μs(min) •LowEMI:MeetsCISPR-11andCISPR-25 standards •Safety-relatedcertificati

AMC1306M25QDWVRQ1

Marking：1306M25Q；Package：SOIC；AMC1306M25-Q1 Automotive, High-Precision, 짹250-mV Input, Reinforced Isolated Delta-Sigma Modulator

1Features •AEC-Q100qualifiedforautomotiveapplications: –Temperaturegrade1:–40°Cto+125°C,TA •FunctionalSafety-Capable –Documentationavailabletoaidfunctionalsafety systemdesign •Linearinputvoltagerange:±250mV •LowDCerrors: –Offseterror:±100μV(max) –Offse

APT13003HZTR-G1

Marking：13003HZ-G1；Package：TO92；465V NPN HIGH VOLTAGE POWER TRANSISTOR

Features •BVCEO>465V •BVCES>800V •BVEBO>9V •IC=1.5AHighContinuousCollectorCurrent •Lead-FreeFinish;RoHSCompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3) •Forautomotiveapplicationsrequiringspecificchangecontrol(i.e.partsqualifiedtoAE

DXT13003DG-13

Marking：13003D；Package：SOT223；450V NPN HIGH VOLTAGE POWER TRANSISTOR IN SOT223

Features BVCEO>450V BVCES>700V BVEBO>9V IC=1.5AhighContinuousCollectorCurrent IntegratedCollector-EmitterDiodetoactasfree-wheelingdiode TotallyLead-Free&FullyRoHScompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

DXT13003EK-13

Marking：13003E；Package：TO252；460V NPN HIGH VOLTAGE POWER TRANSISTOR IN TO252

Features BVCEO>460V BVCES>700V BVEBO>9V IC=1.5AHighContinuousCollectorCurrent TotallyLead-Free&FullyRoHSCompliant(Notes1&2) HalogenandAntimonyFree.“Green”Device(Note3)

IPD130N10NF2S

Marking：130N10NS；Package：PG-TO252-3；StrongIRFETTM 2 Power-Transistor

Features •Optimizedforawiderangeofapplications •N-Channel,normallevel •100avalanchetested •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21

IPP130N20NM6

Marking：130N20N6；Package：PG-TO220-3；MOSFET OptiMOS™ 6 Power‑Transistor, 200 V

Features •N‑channel,normallevel •Lowon‑resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb‑freeleadplating;RoHScompliant •Halogen‑freeaccordingtoIEC61249‑2‑21 •100%avalanchetested

ISC130N20NM6

Marking：130N20N；Package：PG-TSON-8；MOSFET OptiMOSTM 6 Power-Transistor, 200 V

Features •N-channel,normallevel •Verylowon-resistanceRDS(on) •ExcellentgatechargexRDS(on)product(FOM) •Verylowreverserecoverycharge(Qrr) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •Halogen-freeaccordingtoIEC61249-2-21 •MSL1classifiedacc