12M1H060

CoolSiC??1200V SiC Trench MOSFET Silicon Carbide MOSFET

Features Verylowswitchinglosses Threshold-freeonstatecharacteristic Benchmarkgatethresholdvoltage,VGS(th)=4.5V 0Vturn-offgatevoltageforeasyandsimplegatedrive FullycontrollabledV/dt Robustbodydiodeforhardcommutation Temperatureindependentturn-offs