AIMCQ120R040M1T

Marking：12A040M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=61AatTC=25°C •RDS(on)=40mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R060M1T

Marking：12A060M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=44AatTC=25°C •RDS(on)=60mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R080M1T

Marking：12A080M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=34AatTC=25°C •RDS(on)=80mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestdev

AIMCQ120R120M1T

Marking：12A120M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=24AatTC=25°C •RDS(on)=117mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowestde

AIMCQ120R160M1T

Marking：12A160M1；Package：PG-HDSOP-22-3；CoolSiC™ Automotive MOSFET 1200 V in HDSOP-22-3 package

Features •VDSS=1200VatTvj=-55...175°C •IDDC=18.6AatTC=25°C •RDS(on)=160mΩatVGS=20V,Tvj=25°C •Newperformance-optimizedchiptechnology(Gen1p)withimprovedRDSon*A •Bestinclassswitchingenergyforlowerswitchinglossesandreducedcoolingefforts •Lowest

STH12N120K5-2AG

Marking：12A120K5；Package：H2PAK-2；Automotive-grade N-channel 1200 V, 1.45 Ω typ., 7 A, MDmesh K5 Power MOSFET in an H²PAK‑2 package

Features •AEC-Q101qualified •Industry’slowestRDS(on)xarea •Industry’sbestFoM(figureofmerit) •Ultra-lowgatecharge •100avalanchetested Applications •Switchingapplications Description ThisveryhighvoltageN-channelPowerMOSFETisdesignedusingMDmesh K5technolo

TPSMA12A

Marking：12AA；Package：SMA；Surface Mount Transient Voltage Suppressors

Features ●Glasspassivatedchip ●400Wpeakpulsepowercapabilitywitha10/1000μswaveform,repetitiverate(dutycycle):0.01 ●HighreliabilityapplicationandautomotivegradeAECQ101qualified ●Lowleakage ●UniandBidirectionalunit ●Excellentclampingcapability ●Veryfastr

TPSMA12A

Marking：12AA；Package：DO-214AC；12 To 100V 400W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 400Wpeakpulsepowercapabilitywitha10/1000μs waveform,repetitiverate(dutycycle):0.01 HighreliabilityapplicationandautomotivegradeAECQ101 qualified Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime P

TPSMC12A

Marking：12AA；Package：DO-214AB；12 To 91V 1500W Surface Mount Transient Voltage Suppressors

Features Glasspassivatedchip 1500Wpeakpulsepowercapabilitywitha10/1000μs waveform,repetitiverate(dutycycle):0.01 HighreliabilityapplicationandautomotivegradeAECQ101 qualified Lowleakage UniandBidirectionalunit Excellentclampingcapability Veryfastresponsetime

ISL6612ACRZ

Marking：12AZ；Package：10Ld3x3DFN；Advanced Synchronous Rectified Buck MOSFET Drivers with Pre-POR OVP