300 Watts - 40 Volts, 150關s, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

文件：227.11 Kbytes 页数：4 Pages

MICROSEMI

美高森美

300 Watts - 40 Volts, 150ms, 10 Radar 1200 - 1400 MHz

GENERAL DESCRIPTION The 1214-300M is an internally matched, COMMON BASE transistor capable of providing 300 Watts of pulsed RF output power at one hundred fifty microseconds pulse width, ten percent duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specif

文件：117.66 Kbytes 页数：4 Pages

ADPOW

RF/Microwave Si BJT Power Devices & Pallets

1. replace APT logo with Microsemi logo2. replace wording diffused Re with NiCr emitter3. remove Iebo spec.

Microchip

微芯科技

Package：55ST；包装：散装 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 50V 1.4GHZ 55ST

MICROSEMI

美高森美