P6SMB120A

Marking：120A；Transient Voltage Suppressors

Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan1.0psfrom0v

P6SMB120CA

Marking：120C；Transient Voltage Suppressors

Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lowprofilepackage •Lowinductance •Excellentclampingcapability •Fastresponsetime:typicallylessthan1.0psfrom0v

P6SMB120CA

Marking：120C；Transient Voltage Suppressors

GlassPassivatedJunctionTransientVoltageSuppressor VOLTAGE-6.8TO550Volts 400WattPeakPulsePower Features •Forsurfacemountedapplicationsinordertooptimizeboardspace •Glasspassivatedjunction •Built-instrainrelief •Excellentclampingcapability •Lo

P6SMB120CA

Marking：120C；Package：DO-214AA；6.8 To 600V 600W Surface Mount Transient Voltage Suppressors (TVS)

Features Forsurfacemountedapplicationsinordertooptimizeboardspace Lowleakage UniandBidirectionalunit Glasspassivatedjunction Lowinductance Excellentclampingcapability TypicalIRlessthan5μAabove10V 600WPeakpowercapabilityat10×1000μswaveformRepetition rate(d

P6SMB120CA

Marking：120C；Package：DO-214AA；Transient Voltage Suppressors (TVS) Data Sheet

eatures Forsurfacemountedapplicationsinordertooptimizeboardspace Lowprofilepackage Builtinstrainrelief Glasspassivatedjunction Lowinductance Excellentclampingcapability 600Wpeakpulsepowercapabilityat10/1000μswaveform,repetitionrate(dutycycle):0.01%

PJMF120N60EC

Marking：120N60EC；Package：ITO-220AB-F；600V N-Channel Super Junction MOSFET

Feature: RDS(ON)Max,VGS@10V:120mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:ITO-220AB-Fpackage Terminals:

PJMH120N60EC

Marking：120N60EC；Package：TO-247AD-3LD；600V N-Channel Super Junction MOSFET

Feature: RDS(ON)Max,VGS@10V:120mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-247AD-3LDpackage Terminals

PJMP120N60EC

Marking：120N60EC；Package：TO-220AB-L；600V N-Channel Super Junction MOSFET

Feature: RDS(ON)Max,VGS@10V:120mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-220AB-Lpackage Terminals:

PSMQC120N06LS1

Marking：120N06LS；Package：DFN5060-8L；60V N-Channel Enhancement Mode MOSFET

Feature RDS(ON),VGS@10V,ID@20A

RM120N30T2

Marking：120N30；Package：TO-220-3L；N-Channel Enhancement Mode Power MOSFET

Description TheRM120N30T2usesadvancedtrenchtechnologyand designtoprovideexcellentRDS(ON)withlowgatecharge.It canbeusedinawidevarietyofapplications. GeneralFeatures VDS=30V,ID=120A RDS(ON)