Radial Lead Inductors

文件：101.11 Kbytes 页数：3 Pages

MURATA

村田

Radial Lead Inductors

文件：101.11 Kbytes 页数：3 Pages

MURATA

村田

Radial Lead Inductors

文件：101.11 Kbytes 页数：3 Pages

MURATA

村田

Radial Lead Inductors

文件：101.11 Kbytes 页数：3 Pages

MURATA

村田

Radial Lead Inductors

文件：101.11 Kbytes 页数：3 Pages

MURATA

村田

丝印：11RL60H；Package：LFPAK56D；N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology

General description Dual logic level N-channel MOSFET in an LFPAK56D (Dual Power-SO8) package using TrenchMOS technology. Features and benefits • Dual MOSFET • Repetitive avalanche rated • High reliability LFPAK56D package • Copper-clip, solder die attach • Qualified to 175 °C Applica

文件：280.84 Kbytes 页数：12 Pages

NEXPERIA

安世

丝印：11RF；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features • Ultra-low IQ: 1 μA • Reverse current protection • Low ISHUTDOWN: 150 nA • Input voltage range: 2.7 V to 30 V • Supports 200-mA peak output • 2% accuracy over temperature • Available in fixed-output voltages: 1.2 V to 6.5 V • Thermal shutdown and overcurrent protection •

文件：2.12946 Mbytes 页数：39 Pages

TI

德州仪器

丝印：11RF；Package：SOT-23；TPS709 150-mA, 30-V, 1-μA IQ Voltage Regulators With Enable

1 Features • Ultra-low IQ: 1 μA • Reverse current protection • Low ISHUTDOWN: 150 nA • Input voltage range: 2.7 V to 30 V • Supports 200-mA peak output • 2% accuracy over temperature • Available in fixed-output voltages: 1.2 V to 6.5 V • Thermal shutdown and overcurrent protection •

文件：2.12946 Mbytes 页数：39 Pages

TI

德州仪器

丝印：11RF；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：1.89085 Mbytes 页数：36 Pages

TI

德州仪器

丝印：11RF；Package：SOT-23；TPS709 150-mA, 30-V, 1-關A IQ Voltage Regulators with Enable

文件：2.11287 Mbytes 页数：39 Pages

TI

德州仪器