11AA02E64集成电路（IC）的存储器规格书PDF中文资料

11AA02E64属于集成电路（IC）的存储器。由微芯科技股份有限公司制造生产的11AA02E64存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。

Features

Preprogrammed Globally Unique, 48-Bit or 64-Bit

Node Address

Compatible with EUI-48™ and EUI-64™

Single I/O, UNI/O® Serial Interface Bus

Low-Power CMOS Technology:

- 1 mA active current, typical

- 1 μA standby current, maximum

256 x 8-Bit Organization

Schmitt Trigger Inputs for Noise Suppression

Output Slope Control to Eliminate Ground Bounce

100 kbps Maximum Bit Rate – Equivalent to

100 kHz Clock Frequency

Self-Timed Write Cycle (including Auto-Erase)

Page-Write Buffer for up to 16 Bytes

STATUS Register for Added Control:

- Write Enable Latch bit

- Write-In-Progress bit

Block Write Protection:

- Protect none, 1/4, 1/2 or all of array

Built-in Write Protection:

- Power-on/off data protection circuitry

- Write enable latch

High Reliability:

- Endurance: 1,000,000 erase/write cycles

- Data retention: >200 years

- ESD protection: >4,000V

3-Lead SOT-23 and 8-Lead SOIC Packages

Pb-Free and RoHS Compliant

Available Temperature Ranges:

- Industrial (I): -40°C to +85°C