11AA02E48数据手册集成电路（IC）的存储器规格书PDF

描述 Description

The Microchip Technology Inc. 11AA02E48 device is a 2 Kbit Serial Electrically Erasable PROM. The device is organized in blocks of x8-bit memory and support the patented* single I/O UNI/O® serial bus. By using Manchester encoding techniques, the clock and data are combined into a single, serial bit stream (SCIO), where the clock signal is extracted by the receiver to correctly decode the timing and value of each bit.Low-voltage design permits operation down to 1.8V, with standby and active currents of only 1 uA and 1 mA, respectively.The 11AA02E48 is available in standard 8-lead SOICand 3-lead SOT-23 packages.

特性 Features

•Pre-programmed Globally Unique, 48-bit Node Address
•Compatible with EUI-48™ and EUI-64™
•Single I/O, UNI/O® Serial Interface Bus
•Low-Power CMOS Technology:     -  1 mA active current, typical     -  1 µA standby current (max.)
•256 x 8 Bit Organization
•Schmitt Trigger Inputs for Noise Suppression
•Output Slope Control to Eliminate Ground Bounce
•100 kbps Max. Bit Rate – Equivalent to 100 kHz Clock Frequency
•Self-Timed Write Cycle (including Auto-Erase)
•Page-Write Buffer for up to 16 Bytes
•STATUS Register for Added Control:     -  Write enable latch bit     -  Write-In-Progress bit
•Block Write Protection:     -  Protect none, 1/4, 1/2 or all of array
•Built-in Write Protection:     -  Power-on/off data protection circuitry     -  Write enable latch
•High Reliability:     -  Endurance: 1,000,000 erase/write cycles     -  Data retention: > 200 years     -  ESD protection: > 4,000V
•3-lead SOT-23 and 8-lead SOIC Packages
•Available Temperature Ranges:     -  Industrial (I): -40C to +85C

简介

11AA02E48属于集成电路（IC）的存储器。由制造生产的11AA02E48存储器存储器是集成电路上用作数据存储设备的半导体器件。这些器件分为非易失性或易失性两种，格式包括 CBRAM、DRAM、EEPROM、EERAM、EPROM、闪存、FRAM、NVSRAM、PCM (PRAM)、PSRAM、RAM 和 SRAM。这些器件的存储容量为 64 b 至 6 Tb 不等，接口有 I2C、MMC、并行、eMMC、串行、单线、SPI、UFS、Xccela 总线和 1-线。