丝印：107；WL-OCPT Optocoupler Phototransistor

General Information: Operating Temperature -55 up to +110 °C Storage Conditions (for single parts) -55 up to +125 °C Storage Conditions (in original packaging)

文件：1.42304 Mbytes 页数：12 Pages

WURTHWurth Elektronik GmbH & Co. KG, Germany.

伍尔特伍尔特集团

丝印：107；Package：CP5；NPN Epitaxial Planar Silicon Composite Transistor Switching Applications

Switching Applications Features • On-chip bias resistors (R1=47kΩ, R2=47kΩ) • Composite type with 2 transistors contained in the CP package currently in use, improving the mounting efficiency greatly. • The FC108 is formed with two chips, being equivalent to the 2SC3395, placed in one package.

文件：44.56 Kbytes 页数：2 Pages

SANYO

三洋

丝印：107；Package：8Ld2x3DFN；1.5A 1.6MHz Low Quiescent Current High Efficiency Synchronous Buck Regulator

文件：671.87 Kbytes 页数：13 Pages

RENESAS

瑞萨

丝印：107；Package：SOT-25；TOSHIBA CMOS Linear Integrated Circuit Silicon Monolithic

文件：585.78 Kbytes 页数：12 Pages

TOSHIBA

东芝

丝印：1078C；Package：SOIC；LinCMOS μPOWER PRECISION OPERATIONAL AMPLIFIERS

Power Dissipation as Low as 10 μW Typ Per Amplifier Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min VIO . . . 450 μV/850 μV Max in DIP and Small-Outline Package (TLC1078/79) Input Offset Voltage Drift . . . 0.1 μV/Month Typ, Including the First 30 Days High-impedance LinCM

文件：1.05726 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1078C；Package：SOIC；LinCMOS μPOWER PRECISION OPERATIONAL AMPLIFIERS

Power Dissipation as Low as 10 μW Typ Per Amplifier Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min VIO . . . 450 μV/850 μV Max in DIP and Small-Outline Package (TLC1078/79) Input Offset Voltage Drift . . . 0.1 μV/Month Typ, Including the First 30 Days High-impedance LinCM

文件：1.05726 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1078C；Package：SOIC；LinCMOS μPOWER PRECISION OPERATIONAL AMPLIFIERS

Power Dissipation as Low as 10 μW Typ Per Amplifier Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min VIO . . . 450 μV/850 μV Max in DIP and Small-Outline Package (TLC1078/79) Input Offset Voltage Drift . . . 0.1 μV/Month Typ, Including the First 30 Days High-impedance LinCM

文件：1.05726 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1078C；Package：SOIC；LinCMOS μPOWER PRECISION OPERATIONAL AMPLIFIERS

Power Dissipation as Low as 10 μW Typ Per Amplifier Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min VIO . . . 450 μV/850 μV Max in DIP and Small-Outline Package (TLC1078/79) Input Offset Voltage Drift . . . 0.1 μV/Month Typ, Including the First 30 Days High-impedance LinCM

文件：1.05726 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1078I；Package：SOIC；LinCMOS μPOWER PRECISION OPERATIONAL AMPLIFIERS

Power Dissipation as Low as 10 μW Typ Per Amplifier Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min VIO . . . 450 μV/850 μV Max in DIP and Small-Outline Package (TLC1078/79) Input Offset Voltage Drift . . . 0.1 μV/Month Typ, Including the First 30 Days High-impedance LinCM

文件：1.05726 Mbytes 页数：39 Pages

TI

德州仪器

丝印：1078I；Package：SOIC；LinCMOS μPOWER PRECISION OPERATIONAL AMPLIFIERS

Power Dissipation as Low as 10 μW Typ Per Amplifier Operates on a Single Silver-Oxide Watch Battery, VDD = 1.4 V Min VIO . . . 450 μV/850 μV Max in DIP and Small-Outline Package (TLC1078/79) Input Offset Voltage Drift . . . 0.1 μV/Month Typ, Including the First 30 Days High-impedance LinCM

文件：1.05726 Mbytes 页数：39 Pages

TI

德州仪器