PDTC143EQA

Marking：101001；Package：DFN1010D-3；50 V, 100 mA NPN resistor-equipped transistors

Featuresandbenefits 100mAoutputcurrentcapability Built-inbiasresistors Simplifiescircuitdesign Reducescomponentcount Reducedpickandplacecosts Lowpackageheightof0.37mm AEC-Q101qualified SuitableforAutomaticOptical Inspection(AOI)ofsolderjoint

PESD12VS1ULD-Q

Marking：1010；Package：DFN1006D-2；Unidirectional ESD protection diode

1.Generaldescription UnidirectionalElectroStaticDischarge(ESD)protectiondiodedesignedtoprotectonesignal linefromthedamagecausedbyESDandothertransients.ThedeviceishousedinaSOD882D leadlessultrasmallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolde

PHPT61010NY

Marking：1010NAB；Package：SOT669；100 V, 10 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-Mounted Device(SMD)powerplasticpackage. PNPcomplement:PHPT61010PY 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrinted

PHPT61010NY-Q

Marking：1010NAB；Package：SOT669；100 V, 10 A NPN high power bipolar transistor

1.Generaldescription NPNhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. PNPcomplement:PHPT61010PY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Hightemperatureapplicationsupto175°C •ReducedPrin

PHPT61010PY

Marking：1010PAB；Package：SOT669；100 V, 10 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice (SMD)powerplasticpackage. NPNcomplement:PHPT61010NY. 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •Re

PHPT61010PY-Q

Marking：1010PAB；Package：SOT669；100 V, 10 A PNP high power bipolar transistor

1.Generaldescription PNPhighpowerbipolartransistorinaSOT669(LFPAK56)Surface-MountedDevice(SMD)power plasticpackage. NPNcomplement:PHPT61010NY-Q 2.Featuresandbenefits •Highthermalpowerdissipationcapability •Suitableforhightemperatureapplicationsupto175°C •

PMEG4002ELD

Marking：1011；Package：SOD882D；40 V, 0.2 A low VF MEGA Schottky barrier rectifier

1.1Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaSOD882Dleadlessultra smallSurface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside pads. 1.2F

PMEG4010EPK

Marking：1010；Package：SOD1608；40 V, 1 A low VF MEGA Schottky barrier rectifier

1.Generaldescription PlanarMaximumEfficiencyGeneralApplication(MEGA)Schottkybarrierrectifierwithan integratedguardringforstressprotection,encapsulatedinaleadlessultrasmallSOD1608 (DFN1608D-2)Surface-MountedDevice(SMD)plasticpackagewithvisibleandsolderableside

SVT10111NDTR

Marking：10111ND；Package：TO-252-2L；14A, 100V N-CHANNEL MOSFET

DESCRIPTION SVT10111NDisanN-channelenhancementmodepowerMOSfield effecttransistorwhichisproducedusingSilan'sLVMOStechnology. Theimprovedprocessandcellstructurehavebeenespecially tailoredtominimizeon-stateresistance,providesuperiorswitching performanceandwithsta

TPM1019ND6

Marking：1019D；Package：DFN2X2；20V N-Channel Enhancement Mode Power MOSFET

Features 0.6mmProfile—IdealforLowProfileApplications PCBFootprintof4mm? LowGateThresholdVoltage LowOn-Resistance