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STL100N3LLH7

N-channel30V,0.0025Ω,25APowerFLAT™(5x6)STripFET™VIIDeepGATE™PowerMOSFET

Features ■RDS(on)*Qgindustrybenchmark ■Extremelylowon-resistanceRDS(on) ■Highavalancheruggedness Application ■Switchingapplications Description Thisdeviceutilizesthe7thgenerationofdesign rulesofST’sproprietarySTripFET™technology, withanewgatestructure.Th

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体集团

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