Package：8-SOIC（0.154"，3.90mm 宽）；包装：管件 类别：集成电路（IC） 时钟缓冲器，驱动器 描述：IC CLK BUFFER 1:2 8SOIC

ONSEMI

安森美半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：52.76 Kbytes 页数：5 Pages

MICREL

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：52.76 Kbytes 页数：5 Pages

MICREL

麦瑞半导体

5V/3.3V 1:2 DIFFERENTIAL FANOUT BUFFER

DESCRIPTION The SY10/100EL11V are 1:2 differential fanout gates. These devices are functionally similar to the E111A/L devices, with higher performance capabilities. Having within-device skews and output transition times significantly improved over the E111A/L, the EL11V is ideally suited for tho

文件：52.76 Kbytes 页数：5 Pages

MICREL

麦瑞半导体