Inductive Sensor

Features ■Ø 6.5 mm, smooth barrel ■Stainless steel, 1.4404 ■DC 2-wire, nom. 8.2 VDC ■Output acc. to DIN EN 60947-5-6 (NAMUR) ■Cable connection ■ATEX category II 1 G, Ex zone 0 ■ATEX category II 1 D, Ex zone 20 ■SIL2 (Low Demand Mode) acc. to IEC 61508, PL c acc. to ISO 13849-1 with HFT0

文件：769.53 Kbytes 页数：3 Pages

TURCKTurck, Inc.

图尔克德国图尔克集团公司

Nylon PCB Supports - Imperial Spacing

文件：126.42 Kbytes 页数：1 Pages

HEYCO

Channel style heat sink with folded back fins

Channel style heat sink with folded back fins for increased cooling surface area. Available with tin plated solderable tabs for easy attachment to the printed circuit card.

文件：8.73467 Mbytes 页数：116 Pages

AAVID

爱美达

ES/KMK 3-GB - Insert strip

Insert strip, Sheet, white, unmarked, can be labeled with: PLOTMARK, CMS-P1-PLOTTER, Office printing systems, mounting type: insert, Number of individual labels: 52, text field height: 17.2 mm, text field width: 39.75 mm

文件：175.01 Kbytes 页数：4 Pages

PHOENIXPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

ME 67,5 UTG/FE KMGY - Mounting base housing

DIN rail housing, Lower housing part with metal foot catch, with 3 FE contacts, tall design, without vents, width: 67.8 mm, height: 99 mm, depth: 107.3 mm, color: light gray (similar RAL 7035), cross connection: without bus connector, number of positions cross connector: not relevant

文件：307.35 Kbytes 页数：8 Pages

PHOENIXPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

10050 Extreme Compatible Transceiver SFP 10/100/1000Base-T (RJ45, Copper, 100m)

Features ATGBICS 10050 SFP operates on standard Category 5 unshielded twisted-pair copper cabling of link lengths up to 100m. Extreme 1000BASE-T SFP modules support 10/100/1000 auto negotiation and auto MDI/MDIX. Our product meets the specification of Extreme 10050= and we proudly offer a compa

文件：184.9 Kbytes 页数：7 Pages

ATGBICS

Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching

文件：60.86 Kbytes 页数：4 Pages

ADPOW

PSI-DATA/FAX-MODEM/RS232

文件：323.92 Kbytes 页数：7 Pages

PHOENIXPHOENIX CONTACT

菲尼克斯德国菲尼克斯电气集团

M 2,54 SRC-A, 2-polig

文件：50.74 Kbytes 页数：1 Pages

ERNI

MSpeed Messerl. 90 PM

文件：74.43 Kbytes 页数：1 Pages

ERNI