06035J5R6BBS说明书PDF资料原装现货恩智浦-114ic电子网

型号	下载订购	功能描述	制造商上传企业	LOGO
06035J5R6BBS	文件：678.66 Kbytes Page：15 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312B is a 2-stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or rep 文件：678.66 Kbytes 页数：15 Pages	恩XP	恩XP
06035J5R6BBS	文件：901.87 Kbytes Page：18 Pages	Heterojunction Bipolar Transistor Technology (InGaP HBT) Heterojunction Bipolar Transistor Technology (InGaP HBT) High Efficiency/Linearity Amplifier The MMA20312BV is a 2--stage high efficiency, Class AB InGaP HBT amplifier designed for use as a linear driver amplifier in wireless base station applications as well as an output stage in femtocell or r 文件：901.87 Kbytes 页数：18 Pages	恩XP	恩XP
06035J5R6BBSTR	文件：100 bytes Page：1 Pages	Package：0603（1608 公制）；包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带类别：电容器薄膜电容器描述：CAP THIN FILM 5.6PF 50V 0603	KSS 京瓷	KSS
06035J5R6BBSTR-500	文件：100 bytes Page：1 Pages	包装：卷带（TR）类别：电容器薄膜电容器描述：ACCU-F/P	KSS 京瓷	KSS

更多06035J5R6BBS供应商更新时间2025-12-6 16:50:00