丝印：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features © Ulta low capacitance 0 3pF typical(10 010) © Ultra low leakage: nA level | Low operating voltage: 5V ® Complies with following standards: © ~ IEC 61000-4-2 (ESD) immunity test | Air discharge: £20kV Contact discharge: +15kV © — IEC61000-4-5 (Lightning)3 5A (8/20us) ® RoHS

文件：1.27887 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ® Ultra low capacitance:0.3pF typical(1O to 10) ® Ultra low leakage: nA level ® Low operating voltage: 5 ® Complies with following standards: ® — [EC 61000-4-2 (ESD) immunity test Air discharge: +£20kV Contact discharge: £15kV oe — IEC61000-4-5 (Lightning)3.5A (8/20 ps) ® RoHS Co

文件：1.26994 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

丝印：0502N；Package：DFN1210-6；Low Capacitance TVS Diode Array

Features ® Ultra low capacitance-0.3pF typical(I0 to 10) ® Ultra low leakage: nA level ® Low operating voltage: 5V ® Complies with following standards: © — IEC 61000-4-2 (ESD) immunity test Air discharge: £20kV Contact discharge: +15kV/ © — IEC61000-4-5 (Lightning)3 5A (8/20us) © RoHS Com

文件：1.27453 Mbytes 页数：4 Pages

TECHPUBLIC

台舟电子

UWB: 3.7 – 4.2 GHz Chip Antenna

Features • BW of 500 MHz • Linear Polarization • VSWR

文件：917.35 Kbytes 页数：11 Pages

ABRACON

Metal Oxide Semiconductor Field Effect Transistor

文件：1.58629 Mbytes 页数：13 Pages

INFINEON

英飞凌

Metal Oxide Semiconductor Field Effect Transistor

文件：1.65262 Mbytes 页数：12 Pages

INFINEON

英飞凌