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ZXTP19060CFFTA

60V, SOT23F, PNP medium power transistor

Description ThismediumvoltagePNPtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhilstofferingalowerprofileandhigherpowerdissipationforapplicationswherepow

Zetex

Zetex Semiconductors

ZXTP19060CFFTA

60V, SOT23F, PNP medium power transistor

Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens

DIODESDiodes Incorporated

达尔科技

ZXTP19060CFFTA

60V PNP MEDIUM POWER TRANSISTOR

DIODESDiodes Incorporated

达尔科技

ZXTP19060CFFTA

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:SOT-23-3 扁平引线 类别:分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 描述:TRANS PNP 60V 4A SOT23F

PAMDiodes Incorporated

龙鼎威

AGR19060E

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

AGR19060EF

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

AGR19060EU

60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor

Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess

TriQuint

TriQuint Semiconductor

LET19060C

RFPOWERTRANSISTORSLdmosEnhancedTechnology

DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

MRF19060

RFPOWERFIELDEFFECTTRANSISTORS

TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,2

MotorolaMotorola, Inc

摩托罗拉

MRF19060

RFPowerFieldEffectTransistors

RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA

freescaleFreescaleiscreatingasmarter

飞思卡尔

ZXTN19060CFF

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CFF

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODESDiodes Incorporated

达尔科技

ZXTN19060CFFTA

60VNPNHIGHGAINPOWERTRANSISTOR

Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu

DIODESDiodes Incorporated

达尔科技

ZXTN19060CFFTA

60V,SOT23F,NPNhighgainpowertransistor

Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat

Zetex

Zetex Semiconductors

ZXTN19060CG

60VNPNlowsatmediumpowertransistorinSOT223

Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

ZXTN19060CGTA

60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR

DIODESDiodes Incorporated

达尔科技

ZXTN19060CGTA

60VNPNlowsatmediumpowertransistor

Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat

Zetex

Zetex Semiconductors

ZXTN19060CGTA

60VNPNlowsatmediumpowertransistorinSOT223

Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat)

DIODESDiodes Incorporated

达尔科技

ZXTP19060C

60VPNPmediumtransistor

Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighGain •Lowsaturationvoltage •Highpeakcurrent •7Vreverse

Zetex

Zetex Semiconductors

产品属性

  • 产品编号:

    ZXTP19060CFFTA

  • 制造商:

    Diodes Incorporated

  • 类别:

    分立半导体产品 > 晶体管 - 双极性晶体管(BJT)- 单个

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 晶体管类型:

    PNP

  • 不同 Ib、Ic 时 Vce 饱和压降(最大值):

    270mV @ 400mA,4A

  • 电流 - 集电极截止(最大值):

    50nA(ICBO)

  • 不同 Ic、Vce 时 DC 电流增益 (hFE)(最小值):

    200 @ 100mA,2V

  • 频率 - 跃迁:

    180MHz

  • 工作温度:

    -55°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    SOT-23-3 扁平引线

  • 供应商器件封装:

    SOT-23F

  • 描述:

    TRANS PNP 60V 4A SOT23F

供应商型号品牌批号封装库存备注价格
Diodes Incorporated
23+
SOT-23-3 扁平引线
30000
晶体管-分立半导体产品-原装正品
询价
DIODES/美台
2019+
SOT23F
78550
原厂渠道 可含税出货
询价
DIODES/美台
20+
SOT-23
120000
原装正品 可含税交易
询价
DIODES/美台
SOT23F
7906200
询价
DIODES(美台)
23+
SOT-23F
9908
支持大陆交货,美金交易。原装现货库存。
询价
DIODES/美台
23+
SOT-23
100586
全新原厂原装正品现货,可提供技术支持、样品免费!
询价
ZETEX
2016+
SOT23
3000
只做原装,假一罚十,公司可开17%增值税发票!
询价
ZETEX
2017+
SOT23
45255
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增
询价
ZetexInc
07+/08+
SOT-23F
7500
询价
DiodesZetex
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
更多ZXTP19060CFFTA供应商 更新时间2024-4-29 18:41:00