首页 >ZXTP19060CGTA>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
ZXTP19060CGTA | 60V PNP medium transistor in SOT223 Features •BVCEO>-60V •BVECO>-7V •IC=5AHighContinuousCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | |
ZXTP19060CGTA | 60V PNP medium transistor Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighGain •Lowsaturationvoltage •Highpeakcurrent •7Vreverse | Zetex Zetex Semiconductors | Zetex | |
ZXTP19060CGTA | 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：TO-261-4，TO-261AA 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 5A SOT223-3 | PAMDiodes Incorporated 龙鼎威 | PAM | |
60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess | TriQuint TriQuint Semiconductor | TriQuint | ||
60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess | TriQuint TriQuint Semiconductor | TriQuint | ||
60W,1930MHz-1990MHz,PCSLDMOSRFPowerTransistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess | TriQuint TriQuint Semiconductor | TriQuint | ||
RFPOWERTRANSISTORSLdmosEnhancedTechnology DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团 | STMICROELECTRONICS | ||
RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,2 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA | freescaleFreescaleiscreatingasmarter 飞思卡尔 | freescale | ||
60V,SOT23F,NPNhighgainpowertransistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof | Zetex Zetex Semiconductors | Zetex | ||
60VNPNHIGHGAINPOWERTRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNHIGHGAINPOWERTRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60V,SOT23F,NPNhighgainpowertransistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof | Zetex Zetex Semiconductors | Zetex | ||
60VNPNlowsatmediumpowertransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat | Zetex Zetex Semiconductors | Zetex | ||
60VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNlowsatmediumpowertransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat | Zetex Zetex Semiconductors | Zetex | ||
60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat) | DIODESDiodes Incorporated 达尔科技 | DIODES | ||
60VPNPmediumtransistor Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighGain •Lowsaturationvoltage •Highpeakcurrent •7Vreverse | Zetex Zetex Semiconductors | Zetex | ||
60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens | DIODESDiodes Incorporated 达尔科技 | DIODES |
产品属性
- 产品编号：
ZXTP19060CGTA
- 制造商：
Diodes Incorporated
- 类别：
分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个
- 包装：
卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带
- 晶体管类型：
PNP
- 不同 Ib、Ic 时 Vce 饱和压降（最大值）：
500mV @ 500mA，5A
- 电流 - 集电极截止（最大值）：
50nA（ICBO）
- 不同 Ic、Vce 时 DC 电流增益 (hFE)（最小值）：
200 @ 100mA，2V
- 频率 - 跃迁：
180MHz
- 工作温度：
-55°C ~ 150°C（TJ）
- 安装类型：
表面贴装型
- 封装/外壳：
TO-261-4，TO-261AA
- 供应商器件封装：
SOT-223-3
- 描述：
TRANS PNP 60V 5A SOT223-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Diodes Incorporated |
23+ |
TO-261-4,TO-261AA |
30000 |
晶体管-分立半导体产品-原装正品 |
询价 | ||
ZETEX/DIODES |
SOT-223 |
30216 |
原装 原装 原装 只做原装现货 |
询价 | |||
DIODES/美台 |
2019+ |
SOT223 |
78550 |
原厂渠道 可含税出货 |
询价 | ||
DIODES |
20+ |
SOT223 |
2000 |
全新原装,价格优势 |
询价 | ||
DIODES/美台 |
20+ |
SOT-223 |
120000 |
原装正品 可含税交易 |
询价 | ||
DIODES/美台 |
SOT223 |
7906200 |
询价 | ||||
DIODES(美台) |
23+ |
SOT-223-4 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ZETEX |
360000 |
原厂原装 |
1305 |
询价 | |||
ZetexInc |
07+/08+ |
SOT-223TO-261 |
7500 |
询价 | |||
原装ZETEX |
2017+ |
SOT223 |
54899 |
深圳代理原装现货进口库存(香港-日本-台湾)开17点增票 |
询价 |
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