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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
AGR19060E	文件：412.49 Kbytes Page：10 Pages	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess	TriQuint TriQuint Semiconductor	TriQuint
AGR19060EF	文件：412.49 Kbytes Page：10 Pages	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess	TriQuint TriQuint Semiconductor	TriQuint
AGR19060EU	文件：412.49 Kbytes Page：10 Pages	60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor Introduction TheAGR19060Eisa60W,28VN-channellaterallydiffusedmetaloxidesemiconductor(LDMOS)RFpowerfieldeffecttransistor(FET)suitableforpersonalcommunicationservice(PCS)(1930MHz—1990MHz),globalsystemformobilecommunication(GSM/EDGE),time-divisionmultipleaccess	TriQuint TriQuint Semiconductor	TriQuint
LET19060C	文件：34.75 Kbytes Page：4 Pages	RFPOWERTRANSISTORSLdmosEnhancedTechnology DESCRIPTION TheLET19060CisacommonsourceN-Channelenhancement-modelateralField-EffectRFpowertransistordesignedforbroadbandcommercialandindustrialapplicationsatfrequenciesupto1.0GHz.TheLET19060Cisdesignedforhighgainandbroadbandperformanceoperatingincommonsource	STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体（ST）集团	STMICROELECTRONICS
MRF19060	文件：387.9 Kbytes Page：8 Pages	RFPOWERFIELDEFFECTTRANSISTORS TheRFMOSFETLine RFPowerFieldEffectTransistors N–ChannelEnhancement–ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1.9to2.0GHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,2	MotorolaMotorola, Inc 摩托罗拉	Motorola
MRF19060	文件：414.52 Kbytes Page：8 Pages	RFPowerFieldEffectTransistors RFPowerFieldEffectTransistorsN-ChannelEnhancement-ModeLateralMOSFETs DesignedforPCNandPCSbasestationapplicationswithfrequenciesfrom1900to2000MHz.SuitableforCDMA,TDMA,GSMandmulticarrieramplifierapplications. •TypicalCDMAPerformance:1960MHz,26VoltsIS-95CDMA	freescaleFreescaleiscreatingasmarter 飞思卡尔	freescale
ZXTN19060CFF	文件：513.63 Kbytes Page：6 Pages	60V,SOT23F,NPNhighgainpowertransistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof	Zetex Zetex Semiconductors	Zetex
ZXTN19060CFF	文件：377.6 Kbytes Page：7 Pages	60VNPNHIGHGAINPOWERTRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CFFTA	文件：377.6 Kbytes Page：7 Pages	60VNPNHIGHGAINPOWERTRANSISTOR Description Advancedprocesscapabilityhasbeenusedtomaximisetheperformanceofthistransistor.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisofutmostimportance Featu	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CFFTA	文件：513.63 Kbytes Page：6 Pages	60V,SOT23F,NPNhighgainpowertransistor Description ThismidvoltageNPNtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageispincompatiblewiththeindustrystandardSOT23footprintbutofferslowerprofileandhigherdissipationforapplicationswherepowerdensityisof	Zetex Zetex Semiconductors	Zetex
ZXTN19060CG	文件：317.33 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat	Zetex Zetex Semiconductors	Zetex
ZXTN19060CG	文件：324.55 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CGTA	文件：324.55 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistorinSOT223 Features •BVCEO>60V •IC=7AContinuousCollectorCurrent •ICM=12APeakPulseCurrent •LowSaturationVoltageVCE(sat)	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CGTA	文件：487.42 Kbytes Page：7 Pages	60VNPNMEDIUMPOWERLOWSATURATIONTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTN19060CGTA	文件：317.33 Kbytes Page：8 Pages	60VNPNlowsatmediumpowertransistor Description PackagedintheSOT223outlinethisnewlowsaturationNPNtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HigherpowerdissipationSOT223package •Highpeakcurrent •Lowsat	Zetex Zetex Semiconductors	Zetex
ZXTP19060C	文件：212.88 Kbytes Page：8 Pages	60VPNPmediumtransistor Description PackagedintheSOT223outlinethisnewlowsaturationPNPtransistoroffersextremelylowonstatelossesmakingitidealforuseinDC-DCcircuitsandvariousdrivingandpowermanagementfunctions. Features •HighGain •Lowsaturationvoltage •Highpeakcurrent •7Vreverse	Zetex Zetex Semiconductors	Zetex
ZXTP19060CFF	文件：462.64 Kbytes Page：8 Pages	60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTP19060CFF	文件：450.41 Kbytes Page：8 Pages	60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorhasbeendesignedforapplicationsrequiringhighgainandlowsaturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhilstofferingalowerprofileandhigherpowerdissipationforapplicationswherepow	Zetex Zetex Semiconductors	Zetex
ZXTP19060CFF	文件：432.65 Kbytes Page：7 Pages	60VPNPMEDIUMPOWERTRANSISTOR	DIODESDiodes Incorporated 达尔科技	DIODES
ZXTP19060CFFTA	文件：462.64 Kbytes Page：8 Pages	60V,SOT23F,PNPmediumpowertransistor Description ThismediumvoltagePNPtransistorisdesignedforapplicationsrequiringhigh-gainandlow-saturationvoltage.TheSOT23FpackageisPINcompatiblewiththeindustrystandardSOT23footprintwhileofferingalowerprofileandhigherpowerdissipationforapplicationswherepowerdens	DIODESDiodes Incorporated 达尔科技	DIODES

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详细参数

型号：
AGR19060E
制造商：
TRIQUINT
制造商全称：
TriQuint Semiconductor
功能描述：
60 W, 1930 MHz-1990 MHz, PCS LDMOS RF Power Transistor

供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市粤骏腾电子科技有限公司	AGR19060EF	TRIQUINT	23+		200	现货供应	询价
深圳市百诺芯科技有限公司	AGR19060EF	TRIQUINT	23+	TO-59	8510	原装正品代理渠道价格优势	询价
深圳市航宇科工半导体有限公司	AGR19060EF	Advanced Semiconductor, Inc.	22+	Na	2864	航宇科工半导体-中国航天科工集团战略合作伙伴!	询价
深圳芯力源电子科技有限公司	AGR19090	N/A	23+	TO-63	5177	现货	询价
深圳市壹芯创科技有限公司	AGR19090EF	PANASONIC	22+	原厂原封	8200	原装现货库存.价格优势!!	询价
深圳市振宏微科技有限公司	AGR19090EF	AGERE	23+		9	专做原装正品,假一罚百!	询价
深圳市维尔达电子有限公司	AGR19090EF	AGERE	2023+		80000	一级代理/分销渠道价格优势十年芯程一路只做原装正品	询价
深圳市豪迈兴电子有限公司	AGR19090EF-DB	AGERE	2339+		5650	公司原厂原装现货假一罚十!特价出售!强势库存!	询价
深圳市亿智腾科技有限公司	AGR19090EF-DB	AGERE	2021+		6540	原装现货/欢迎来电咨询	询价
深圳市鼎欣微电子有限公司	AGR19090EF-DB	AGERE	21+	原装	25000	只做正品原装现货	询价

更多AGR19060E供应商更新时间2024-5-16 8:30:00

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