零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
N-ChannelPowerMOSFET | ZPSEMI ZP Semiconductor | ZPSEMI | ||
Plastic-EncapsulateMOSFETS | ZPSEMI ZP Semiconductor | ZPSEMI | ||
N-ChannelPowerMOSFET | JIANGSU Jiangsu Changjiang Electronics Technology Co., Ltd | JIANGSU | ||
POWERFIELDEFFECTTRANSISTOR [ChampionMicroelectronicCorporation] GENERALDESCRIPTION ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalanc | ETCList of Unclassifed Manufacturers 未分类制造商 | ETC | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-ChannelEnhancement InPowerProductLines | ETC1List of Unclassifed Manufacturers 未分类制造商 | ETC1 | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelPowerFieldEffectTransistor Description ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage-blockingcapabilitywithoutdegratdingperformanceovertime.Inaddition,thisadvancedMOSFETisdesignedtowithstandhighenergyinavalancheandcommutationmodes.Thenewenergyefficient | HSMC 华昕 | HSMC | ||
N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤0.7Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤700mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
600VSiliconN-ChannelPowerMOSFET | ||||
600VSiliconN-ChannelPowerMOSFET | ||||
600VSuperJunctionPowerMOSFET | ||||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedaccordingtoJEDEC1)fortargetapplications CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LCD&CR | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplication | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)PowerMOSFET FEATURES •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) APPLICATIONS •Serverandtelecompowersupplies •Switchmodepowersupplies(SMPS) •Powerfactorcorrection | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
CoolMOSTMPowerTransistorFeaturesIntrinsicfast-recoverybodydiode Features •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •QualifiedforindustrialgradeapplicationsaccordingtoJEDEC1) CoolMOSCFDdesignedfor: •SoftswitchingPWMStages •LC | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
WALL |
23+ |
TO-TO-220F |
33500 |
全新原装真实库存含13点增值税票! |
询价 | ||
WALL |
23+ |
TO-220F |
10000 |
公司只做原装正品 |
询价 | ||
WALL |
22+ |
TO-220F |
6000 |
十年配单,只做原装 |
询价 | ||
WALL |
23+ |
TO-220F |
6000 |
原装正品,支持实单 |
询价 | ||
WALL |
22+ |
TO-220F |
25000 |
只做原装进口现货,专注配单 |
询价 | ||
WALL |
24+25+/26+27+ |
TO-220-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
WILLSEMI |
2020+ |
TO-220F |
466200 |
原厂VIP渠道,亚太地区一级代理商,可提供更多数量! |
询价 | ||
WILLSEMI(韦尔) |
23+ |
PDFN5X6-8L |
15000 |
韦尔股份原厂渠道供应 |
询价 | ||
WILLSEMI |
23+ |
TO-220 |
288500 |
原装现货 |
询价 | ||
WILL |
19+ |
SOT23-3 |
200000 |
询价 |
相关规格书
更多- WP90582L9
- WP91854L2
- WP92746L1
- WS78L05
- WT2232
- WT60P1
- WT7510
- WT8043
- WT8048
- X1226S8
- X1227S8I
- X2210P
- X2212P
- X22C12P
- X24128S
- X24165
- X2444P
- X24645
- X24C00P
- X24C01A
- X24C01P
- X24C02P
- X24C04P
- X24C16
- X24C16S
- X24C44P
- X24C45P
- X25020
- X25040
- X25043
- X25045
- X25057
- X25097
- X25128S
- X25160
- X25320
- X25640S
- X25642S
- X25C02
- X25F032
- X2816CS-15
- X2864AP-25
- X28C256D-25
- X28C256JI-25
- X28HC64J-12
相关库存
更多- WP90828L2
- WP92119L1
- WS62256LLP-70
- WSI27C010L-12DMB
- WT2558
- WT62P1
- WT8041
- WT8045
- X0405MF
- X1226S8I
- X1228S14
- X2212D
- X22C10SM
- X2404P
- X24164S
- X24325
- X24641
- X24C00
- X24C01
- X24C01ASIT2
- X24C02
- X24C04
- X24C08
- X24C16P
- X24C44
- X24C44PI
- X24F032
- X25020P
- X25040P
- X25043P
- X25045P
- X25080
- X25128P
- X25138S
- X25170
- X25330
- X25642
- X25650
- X25F016
- X2816CJ-20
- X2816CSI-20
- X2864BD-25
- X28C256J-25
- X28HC256J-12
- X28HC64JI-12