CMT07N60中文资料PDF规格书
CMT07N60规格书详情
[Champion Microelectronic Corporation]
GENERAL DESCRIPTION
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and safety margin against unexpected voltage transients.
FEATURES
♦ Robust High Voltage Termination
♦ Avalanche Energy Specified
♦ Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
♦ Diode is Characterized for Use in Bridge Circuits
♦ IDSS Specified at Elevated Temperature
产品属性
- 型号:
CMT07N60
- 功能描述:
POWER FIELD EFFECT TRANSISTOR
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
CMOS |
24+25+/26+27+ |
TO-3P-3 |
78800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
CHAMPION |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
询价 | ||
原装正品 |
TO220 |
2200 |
国内领先的集成电路专业配单!量大可发货!可开17%增值 |
询价 | |||
VBSEMI |
19+ |
TO- |
29600 |
绝对原装现货,价格优势! |
询价 | ||
VBsemi |
21+ |
TO220 |
10026 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
E |
22+ |
TO- |
6000 |
十年配单,只做原装 |
询价 | ||
VBsemi |
2237+ |
TO220 |
3025 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | ||
VBsemi |
21+ |
TO220 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
E |
23+ |
TO- |
6000 |
原装正品,支持实单 |
询价 | ||
23+ |
N/A |
90650 |
正品授权货源可靠 |
询价 |