H07N60F中文资料PDF规格书
H07N60F规格书详情
Description
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degratding performance over time. In addition, this advanced MOSFET is designed to withstand high energy in avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional and saafety margin against unexpected voltage transients.
Features
• Robust High Voltage Termination
• Avalanc he Energy Specified
• Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• IDSS and VDS(on) Specified at Elevated Temperature
产品属性
- 型号:
H07N60F
- 制造商:
HSMC
- 制造商全称:
HSMC
- 功能描述:
N-Channel Power Field Effect Transistor
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
ADI |
2006 |
5/SOT23 |
133 |
自己公司全新库存绝对有货 |
询价 | ||
TOS |
0005+ |
MSOP-8 |
110 |
询价 | |||
ADI/亚德诺 |
SOT23-5 |
265209 |
假一罚十原包原标签常备现货! |
询价 | |||
TOSHIBA |
17+ |
SOT-183 |
6200 |
100%原装正品现货 |
询价 | ||
H |
23+ |
TO-220 |
6000 |
原装正品,支持实单 |
询价 | ||
H |
23+ |
TO-TO-220F |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
HJ/华昕 |
1822+ |
TO-220F |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
TOSHIBA |
16+ |
SOT-183 |
10000 |
进口原装现货/价格优势! |
询价 | ||
ADI/亚德诺 |
2021+ |
TO23-5 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
询价 | ||
H |
22+ |
TO-220 |
25000 |
只做原装进口现货,专注配单 |
询价 |