首页 >VNV35NV04TR-E>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

VNV35NV04TR-E

OMNIFET II: fully autoprotected Power MOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04TR-E

包装:卷带(TR) 封装/外壳:PowerSO-10 裸露底部焊盘 类别:集成电路(IC) 配电开关,负载驱动器 描述:IC PWR DRIVER N-CHAN 1:1 PWRSO10

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04TR-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04TR-E

?쏰MNIFETII??FULLYAUTOPROTECTEDPOWERMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04-E

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNW35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNW35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    VNV35NV04TR-E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 配电开关,负载驱动器

  • 系列:

    OMNIFET II™, VIPower™

  • 包装:

    卷带(TR)

  • 开关类型:

    通用

  • 输出数:

    1

  • 比率 - 输入:

    1:1

  • 输出配置:

    低端

  • 输出类型:

    N 通道

  • 接口:

    开/关

  • 电压 - 负载:

    36V(最大)

  • 电压 - 供电 (Vcc/Vdd):

    不需要

  • 电流 - 输出(最大值):

    30A

  • 导通电阻(典型值):

    10 毫欧(最大)

  • 输入类型:

    非反相

  • 故障保护:

    限流(固定),超温,过压

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 供应商器件封装:

    10-PowerSO

  • 封装/外壳:

    PowerSO-10 裸露底部焊盘

  • 描述:

    IC PWR DRIVER N-CHAN 1

供应商型号品牌批号封装库存备注价格
STM
2022
HSOP10
39
原厂原装正品,价格超越代理
询价
ST/意法
21+
HSOP10
9850
只做原装正品假一赔十!正规渠道订货!
询价
22+23+
原厂原包
23360
绝对原装正品现货,全新深圳原装进口现货
询价
23+
N/A
46280
正品授权货源可靠
询价
STMicroelectronics
23+
10-PowerSO
66800
优势价格原装正品
询价
ST
20+
na
65790
原装优势主营型号-可开原型号增税票
询价
VNV
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
STMicroelectronics
21+
10-PowerSO
36500
一级代理/放心采购
询价
STM
23+
原厂封装
6771
原装现货
询价
STM
20+
SOP-10
1001
就找我吧!--邀您体验愉快问购元件!
询价
更多VNV35NV04TR-E供应商 更新时间2024-5-15 16:18:00