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VNB35NV04TR-E

?쏰MNIFET II?? FULLY AUTOPROTECTED POWER MOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04TR-E

OMNIFET II: fully autoprotected Power MOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04TR-E

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 封装/外壳:TO-263-3,D²Pak(2 引线 + 接片),TO-263AB 类别:集成电路(IC) 配电开关,负载驱动器 描述:IC PWR DRIVER N-CHAN 1:1 D2PAK

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNB35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04-E

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNP35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNV35NV04TR-E

OMNIFETII:fullyautoprotectedPowerMOSFET

Description TheVNB35NV04-E,VNP35NV04-EandVNV35NV04-EaremonolithicdevicesdesignedinSTMicroelectronics®VIPower®M0-3Technology,intendedforreplacementofstandardPowerMOSFETsfromDCupto25kHzapplications. Built-inthermalshutdown,linearcurrentlimitationandovervoltagecla

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNW35NV04

FULLYAUTOPROTECTEDPOWERMOSFET

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

VNW35NV04

OMNIFETIIFULLYAUTOPROTECTEDPOWERMOSFET

DESCRIPTION TheVNB35NV04,VNP35NV04,VNV35NV04,VNW35NV04aremonolithicdevicesdesignedinSTMicroelectronicsVIPowerM0-3Technology,intendedforreplacementofstandardPowerMOSFETSfromDCupto25KHzapplications.Builtinthermalshutdown,linearcurrentlimitationandovervoltageclamp

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

产品属性

  • 产品编号:

    VNB35NV04TR-E

  • 制造商:

    STMicroelectronics

  • 类别:

    集成电路(IC) > 配电开关,负载驱动器

  • 系列:

    OMNIFET II™, VIPower™

  • 包装:

    卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带

  • 开关类型:

    通用

  • 输出数:

    1

  • 比率 - 输入:

    1:1

  • 输出配置:

    低端

  • 输出类型:

    N 通道

  • 接口:

    开/关

  • 电压 - 负载:

    36V(最大)

  • 电压 - 供电 (Vcc/Vdd):

    不需要

  • 电流 - 输出(最大值):

    30A

  • 导通电阻(典型值):

    13 毫欧(最大)

  • 输入类型:

    非反相

  • 故障保护:

    限流(固定),超温,过压

  • 工作温度:

    -40°C ~ 150°C(TJ)

  • 安装类型:

    表面贴装型

  • 供应商器件封装:

    D2PAK

  • 封装/外壳:

    TO-263-3,D²Pak(2 引线 + 接片),TO-263AB

  • 描述:

    IC PWR DRIVER N-CHAN 1

供应商型号品牌批号封装库存备注价格
STMicroelectronics
23+
D2PAK
25717
英飞凌电源管理芯片-原装正品
询价
ST(意法)
21+
5000
只做原装 假一罚百 可开票 可售样
询价
22+
36000
代理渠道力挺长期原装现货 可开增票
询价
ST
22+
TO-263-3
4998
正规渠道,只有原装!
询价
ST/意法半导体
22+
D2PAK-2
6005
原装正品现货 可开增值税发票
询价
ST/意法
22+
TO-263-3
6000
原装正品
询价
ST
TO-263
1000
有挂就有正品原装
询价
ST
21+
TO-263
6341
面向全世界客户,原装现货亿万库存
询价
ST(意法)
2023
10000
全新、原装
询价
ST/意法
23+
TO-263
30000
原装优势公司现货!
询价
更多VNB35NV04TR-E供应商 更新时间2024-5-1 14:14:00