首页 >STP22NM60N-H>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel650-V(D-S)SuperJunctionMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
Automotive-gradeN-channel600V,0.17??typ.,17AFDmesh??IIPowerMOSFETinaTO-220FPpackage Description ThisFDmesh™IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh™IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor •FEATURES •Lowinputcapacitanceandgatecharge •Lowgateinputresistances •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
IscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC |
详细参数
- 型号:
STP22NM60N-H
- 制造商:
ST
- 功能描述:
N-channel 600 V, 0.190 ?, 16 A MDmesh II Power MOSFET
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMICRO |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
ST/意法 |
22+ |
TO-220 |
50000 |
郑重承诺只做原装进口现货 |
询价 | ||
STMICRO |
2147+ |
原厂封装 |
12500 |
原厂原装现货订货价格优势终端BOM表可配单提供样品 |
询价 | ||
ST |
TO-220 |
93480 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
ST |
23+ |
TO-220 |
6000 |
原装,可配单 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
ST/意法 |
21+ |
TO-220 |
8000 |
优势供应 实单必成 可开增值税13点 |
询价 | ||
ST/意法 |
22+ |
TO-220 |
10000 |
公司原装现货,欢迎咨询 |
询价 | ||
ST/意法 |
23+ |
TO-220 |
8000 |
原装正品实单必成 |
询价 | ||
ST/意法 |
19+ |
TO220 |
5000 |
支持实单/原盒/原包/原标/进口原装 |
询价 |
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