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STB22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF22NM60N

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STF22NM60ND

Automotive-gradeN-channel600V,0.17??typ.,17AFDmesh??IIPowerMOSFETinaTO-220FPpackage

Description ThisFDmesh™IIPowerMOSFETwithfastrecoverybodydiodeisproducedusingMDmesh™IItechnology.Utilizinganewstriplayoutverticalstructure,thisdevicefeatureslowon-resistanceandsuperiorswitchingperformance.ItisidealforbridgetopologiesandZVSphase-shiftconverter

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STI22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STI22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP22NM60N

IscN-ChannelMOSFETTransistor

•FEATURES •Lowinputcapacitanceandgatecharge •Lowgateinputresistances •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60

N-CHANNEL600V-0.19ohm-22ATO-220/FP/D2PAK/I2PAK/TO-247MDmesh?줡owerMOSFET

DESCRIPTION ThisimprovedversionofMDmesh™whichisbasedonMultipleDrainprocessrepresentsthenewbenchmarkinhighvoltageMOSFETs.Theresultingproductexhibitsevenloweron-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.TheadoptionoftheCompany’spropr

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60N

N-channel600V,0.2廓,16AMDmesh??IIPowerMOSFET

Description ThesedevicesaremadeusingthesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayouttoyieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemostdemanding

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STW22NM60N

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STP22NM60N-H

  • 制造商:

    ST

  • 功能描述:

    N-channel 600 V, 0.190 ?, 16 A MDmesh II Power MOSFET

供应商型号品牌批号封装库存备注价格
STMICRO
2305+
原厂封装
8900
15年芯片行业经验/只供原装正品:0755-83267371邹小姐
询价
ST/意法
22+
TO-220
50000
郑重承诺只做原装进口现货
询价
STMICRO
2147+
原厂封装
12500
原厂原装现货订货价格优势终端BOM表可配单提供样品
询价
ST
TO-220
93480
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
ST
23+
TO-220
6000
原装,可配单
询价
ST/意法
23+
TO-220
90000
只做原厂渠道价格优势可提供技术支持
询价
ST/意法
21+
TO-220
8000
优势供应 实单必成 可开增值税13点
询价
ST/意法
22+
TO-220
10000
公司原装现货,欢迎咨询
询价
ST/意法
23+
TO-220
8000
原装正品实单必成
询价
ST/意法
19+
TO220
5000
支持实单/原盒/原包/原标/进口原装
询价
更多STP22NM60N-H供应商 更新时间2024-5-30 15:49:00