STP11N60规格书应用电路行情报价第5页-114ic电子网

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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
MDP11N60	文件：1.03328 Mbytes Page：8 Pages	N-Channel650V(D-S)MOSFET	VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司	VBSEMI
MDP11N60	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60TH	文件：1.04564 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDP11N60TH	文件：332.35 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MGP11N60E	文件：123.51 Kbytes Page：6 Pages	InsulatedGateBipolarTransistor InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	MotorolaMotorola, Inc 摩托罗拉	Motorola
MGP11N60E	文件：120.21 Kbytes Page：5 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistor N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)usesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–blockingcapability.Itsnew600VIGBTtechnologyisspecificallysuitedforapplications	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
MGP11N60ED	文件：145.87 Kbytes Page：6 Pages	SHORTCIRCUITRATEDLOWON-VOLTAGE InsulatedGateBipolarTransistorwithAnti-ParallelDiode N–ChannelEnhancement–ModeSiliconGate ThisInsulatedGateBipolarTransistor(IGBT)isco–packagedwithasoftrecoveryultra–fastrectifierandusesanadvancedterminationschemetoprovideanenhancedandreliablehighvoltage–block	ONSEMION Semiconductor 安森美半导体安森美半导体公司	ONSEMI
OM11N60	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
OM11N60SA	文件：33.32 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED [Omnirel] DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperat	etc2List of Unclassifed Manufacturers etc2未分类制造商	etc2
OM11N60SA	文件：35.79 Kbytes Page：4 Pages	POWERMOSFETINHERMETICISOLATED DESCRIPTION ThisseriesofhermeticallypackagedproductsfeaturethelatestadvancedMOSFETandpackagingtechnology.Thedevicebreakdownratingsprovideasubstantialvoltagemarginforstringentapplicationssuchas270VDCaircraftpowerand/orrectified230VACpower(lineoperation).They	IRFInternational Rectifier 英飞凌英飞凌科技公司	IRF
PCFC11N60W	文件：298.83 Kbytes Page：14 Pages	DESIGN/PROCESSCHANGENOTIFICATION Description SuperFET®IIMOSFETisFairchildSemiconductor®’sfirstgenerationofhighvoltagesuper-junction(SJ)MOSFETfamilythatisutilizingchargebalancetechnologyforoutstandinglowon-resistanceandlowergatechargeperformance.Thisadvancedtechnologyistailoredtominimizeconducti	FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司	Fairchild
PSM11N60CT	文件：1.0463 Mbytes Page：9 Pages	11A600VSingleN-ChannelPowerMOSFET	PFCPFC Device Inc. PFC	PFC
PSM11N60CTF	文件：1.045589 Mbytes Page：9 Pages	11A600VSingleN-ChannelPowerMOSFET	PFCPFC Device Inc. PFC	PFC
SIHH11N60E	文件：197.47 Kbytes Page：9 Pages	ESeriesPowerMOSFET FEATURES •Fullylead(Pb)-freedevice •Lowfigure-of-merit(FOM)RonxQg •Lowinputcapacitance(Ciss) •Reducedswitchingandconductionlosses •Ultralowgatecharge(Qg) •Avalancheenergyrated(UIS) •Kelvinconnectionforreducedgatenoise •Materialcategorization:fordefinit	VishayVishay Siliconix 威世科技	Vishay
SIHH11N60E	文件：196.81 Kbytes Page：9 Pages	Reducedswitchingandconductionlosses	VishayVishay Siliconix 威世科技	Vishay
SIHH11N60EF	文件：212.7 Kbytes Page：9 Pages	EFSeriesPowerMOSFETwithFastBodyDiode	VishayVishay Siliconix 威世科技	Vishay
SPA11N60CFD	文件：260.899 Kbytes Page：2 Pages	IscN-ChannelMOSFETTransistor •FEATURES •WithTO-220Fpackage •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •Reducedswitchingandconductionlosses •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplica	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
SPA11N60CFD	文件：262.52 Kbytes Page：12 Pages	CoolMOSPowerTransistor Features •Newrevolutionaryhighvoltagetechnology •Intrinsicfast-recoverybodydiode •Extremelylowreverserecoverycharge •Ultralowgatecharge •Extremedv/dtrated •Highpeakcurrentcapability •Periodicavalancherated •QualifiedaccordingtoJEDEC0)fortargetapplication	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60CFD	文件：210.02 Kbytes Page：12 Pages	CoolMOSTMPowerTransistorFeaturesNewrevolutionaryhighvoltagetechnology	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon
SPA11N60CFD	文件：560.84 Kbytes Page：12 Pages	CoolMOSPowerTransistor	InfineonInfineon Technologies AG 英飞凌英飞凌科技公司	Infineon

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	STP11N60	ST	23+	TO-220	18689		询价
深圳市华斯顿科技有限公司	STP11N60	ST	22+23+	TO-220	35992	绝对原装正品全新进口深圳现货	询价
深圳市芯祺盛科技有限公司	STP11N60	ST	1746+	TO220	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市宏捷佳电子科技有限公司	STP11N60	st	23+	TO-TO-220	37650	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	STP11N60	ST	2020+	TO-220	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市威尔健半导体有限公司	STP11N60	ST/意法	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	STP11N60	ST/意法	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市河锋鑫科技有限公司	STP11N60	ST	22+	TO-220	6000	十年配单,只做原装	询价
深圳市特莱科技有限公司	STP11N60	ST意法半导体	24+23+	TO-220	12580	16年电子元件现货供应商终端BOM表可配单提供样品	询价
中科航电（深圳）电子集团有限公司	STP11N60	ST		TO220	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价

更多STP11N60供应商更新时间2024-6-6 17:03:00

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