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零件编号	下载&订购	功能描述	制造商&上传企业	LOGO
FMV11N60E	文件：553.4 Kbytes Page：5 Pages	N-CHANNELSILICONPOWERMOSFET SuperFAP-E3series Features Maintainsbothlowpowerlossandlownoise LowerRDS(on)characteristic Morecontrollableswitchingdv/dtbygateresistance SmallerVGSringingwaveformduringswitching Narrowbandofthegatethresholdvoltage(3.0±0.5V) Highavalanchedura	FujiFUJI CORPORATION 株式会社ＦＵＪＩ	Fuji
FMV11N60E	文件：313.96 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
HFF11N60S	文件：716.92 Kbytes Page：7 Pages	N-ChannelEnhancementModeFieldEffectTransistor GeneralDescription TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithstandhighenergy	HuashanHuashan Electronic Devices Co 华汕电子器件	Huashan
HMS11N60I	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
HMS11N60K	文件：688.54 Kbytes Page：7 Pages	600VN-ChannelMOSFET	HMSEMIShenzhen Huazhimei Semiconductor Co., Ltd 华之美半导体深圳市华之美半导体有限公司	HMSEMI
ISPP11N60CFD	文件：338.75 Kbytes Page：2 Pages	N-ChannelMOSFETTransistor •DESCRIPTION •Ultralowgatecharge •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance:RDS(on)≤0.44Ω •Enhancementmode •FastSwitchingSpeed •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
ISPW11N60CFD	文件：335.24 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor •DESCRITION •Highpeakcurrentcapability •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤440mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
IXFH11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
IXFM11N60	文件：295.27 Kbytes Page：8 Pages	HIPERFETPowerMOSFTETs HiPerFETs ThehIPerFETfamilyofPowerMOSFETsisdesignedtoprovicesuperiordv/dt,performancewhileeliminatingtheneedfordiscrete,faserecoveryfreewheelingrectifiersInaboardrangeofpowerswitchingapplications.	IXYS IXYS Integrated Circuits Division	IXYS
KP11N60D	文件：388.24 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,I	KECKEC CORPORATION KEC株式会社	KEC
KP11N60F	文件：390.31 Kbytes Page：6 Pages	NCHANNELMOSFIELDEFFECTTRANSISTOR GeneralDescription ThisSuperJunctionMOSFEThasbettercharacteristics,suchasfastswitchingtime,lowonresistance,lowgatechargeandexcellentavalanchecharacteristics.Itismainlysuitableforactivepowerfactorcorrectionandswitchingmodepowersupplies. FEATURES •VDSS=600V,I	KECKEC CORPORATION KEC株式会社	KEC
KPS11N60D	文件：388.63 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式会社	KEC
KPS11N60F	文件：390.57 Kbytes Page：6 Pages	ThisSuperJunctionMOSFEThasbettercharacteristics	KECKEC CORPORATION KEC株式会社	KEC
KSM11N60	文件：2.00345 Mbytes Page：9 Pages	Loweffectiveoutputcapacitance	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI
MDF11N60	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：959.32 Kbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDF11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MDFS11N60	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP
MDFS11N60TH	文件：322.54 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=11A@TC=25℃ ·DrainSourceVoltage :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.55Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-D	ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司	ISC
MDFS11N60TH	文件：1.03851 Mbytes Page：6 Pages	N-ChannelMOSFET600V,11A,0.55(ohm)	MGCHIP MagnaChip Semiconductor.	MGCHIP

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供应商	型号	品牌	批号	封装	库存	备注	价格
深圳市昌和盛利电子有限公司	STP11N60	ST	23+	TO-220	18689		询价
深圳市华斯顿科技有限公司	STP11N60	ST	22+23+	TO-220	35992	绝对原装正品全新进口深圳现货	询价
深圳市芯祺盛科技有限公司	STP11N60	ST	1746+	TO220	8862	深圳公司现货!特价支持工厂客户!提供样品!	询价
深圳市宏捷佳电子科技有限公司	STP11N60	st	23+	TO-TO-220	37650	全新原装真实库存含13点增值税票!	询价
瀚佳科技(深圳)有限公司	STP11N60	ST	2020+	TO-220	16800	绝对原装进口现货,假一赔十,价格优势!?	询价
深圳市威尔健半导体有限公司	STP11N60	ST/意法	23+	TO-220	50000	全新原装正品现货,支持订货	询价
深圳廊盛科技有限公司	STP11N60	ST/意法	2022	TO-220	80000	原装现货,OEM渠道,欢迎咨询	询价
深圳市河锋鑫科技有限公司	STP11N60	ST	22+	TO-220	6000	十年配单,只做原装	询价
深圳市特莱科技有限公司	STP11N60	ST意法半导体	24+23+	TO-220	12580	16年电子元件现货供应商终端BOM表可配单提供样品	询价
中科航电（深圳）电子集团有限公司	STP11N60	ST		TO220	93480	集团化配单-有更多数量-免费送样-原包装正品现货-正规	询价

更多STP11N60供应商更新时间2024-6-6 17:03:00

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