零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
STF9NM60N | N-channel 600 V, 0.63 ohm, 6.5 A TO-220, TO-220FP, DPAK MDmesh ll Power MOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | |
STF9NM60N | isc N-Channel MOSFET Transistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | |
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
9.0A,600VN-CHANNELSUPER-JUNCTIONMOSFET DESCRIPTION TheUTC9NM60isaSuperJunctionMOSFETStructureand isdesignedtohavebettercharacteristics,suchasfastswitching time,lowgatecharge,lowon-stateresistanceandahighrugged avalanchecharacteristics.ThispowerMOSFETisusuallyusedat DC-DCconvertersforpowera | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNEL600V-0.55Ω-8.3ATO-220/DPAK/IPAKMDmesh™PowerMOSFET TYPICALRDS(on)=0.55Ω HIGHdv/dtANDAVALANCHECAPABILITIES IMPROVEDESDCAPABILITY LOWINPUTCAPACITANCEANDGATE CHARGE LOWGATEINPUTRESISTANCE TIGHTPROCESSCONTROLANDHIGH MANUFACTORINGYIELDS DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFET technologythata | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS | ||
N-Channel650V(D-S)PowerMOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES •DrainCurrent–ID=6.5A@TC=25℃ •DrainSourceVoltage- :VDSS=600V(Min) •StaticDrain-SourceOn-Resistance :RDS(on)=0.745Ω(Max) •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS •Switching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-channel600V,0.63ohm,6.5ATO-220,TO-220FP,DPAKMDmeshllPowerMOSFET Description ThisseriesofdevicesisrealizedwiththesecondgenerationofMDmesh™technology.ThisrevolutionaryPowerMOSFETassociatesanewverticalstructuretothecompany’sstriplayoutto yieldoneoftheworld’sloweston-resistanceandgatecharge.Itisthereforesuitableforthemo | STMICROELECTRONICSSTMicroelectronics 意法半导体意法半导体(ST)集团 | STMICROELECTRONICS |
详细参数
- 型号:
STF9NM60N
- 功能描述:
MOSFET N-Ch 600V 0.47 Ohm 9A Mdmesh II PWR MO
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
STMICRO |
2305+ |
原厂封装 |
8900 |
15年芯片行业经验/只供原装正品:0755-83267371邹小姐 |
询价 | ||
ST |
2138+ |
TO-220F |
6900 |
询价 | |||
ST |
23+ |
TO220F |
6996 |
只做原装正品现货 |
询价 | ||
ST/意法 |
2024+实力库存 |
TO-220F |
493 |
只做原厂渠道 可追溯货源 |
询价 | ||
ST |
22+ |
TO-22OF |
1852 |
长源创新-只做原装---假一赔十 |
询价 | ||
ST/意法 |
23+ |
TO-220F |
25000 |
只做进口原装假一罚百 |
询价 | ||
ST/意法半导体 |
22+ |
TO-220-3 |
6008 |
原装正品现货 可开增值税发票 |
询价 | ||
STM |
23+ |
TO-220FP-3 |
3000 |
原装现货支持送检 |
询价 | ||
ST |
14+ |
TO-220F |
920 |
只做原装正品 |
询价 | ||
ST(意法半导体) |
23+ |
TO-220F |
7828 |
支持大陆交货,美金交易。原装现货库存。 |
询价 |
相关规格书
更多- STFE050-10N
- STFE15-5MNAT
- STFE18-5MNAT
- STFE200-24L
- STFE9-5MNAT
- STFI10N65K3
- STFI11N65M2
- STFI13N80K5
- STFI13NK60Z
- STFI15NM65N
- STFI20NK50Z
- STFI24N60M2
- STFI260N6F6
- STFI28N60M2
- STFI34N65M5
- STFI40N60M2
- STFI6N62K3
- STFI6N80K5
- STFI8N80K5
- STFPC320BTR
- STFV050-10N
- STFV075-24L
- STFW24N60M2
- STFW3N150
- STFW45N65M5
- STFW60N65M5
- STFW6N120K3
- STG3157CTR
- STG3682QTR
- STG3684QTR
- STG3693QTR
- STG3699BVTR
- STG3856QTR
- STG4160BJR
- STG4260BJR
- STG5223QTR
- STG5683QTR
- STG6684QTR
- STGAP1S
- STGB10M65DF2
- STGB10NB37LZT4
- STGB10NC60HDT4
- STGB10NC60KT4
- STGB14NC60KT4
- STGB18N40LZT4
相关库存
更多- STFE13-5MNAT
- STFE16-5MNAT
- STFE200-10N
- STFE22-5MNAT
- STFI10N62K3
- STFI10NK60Z
- STFI130N10F3
- STFI13N95K3
- STFI15N65M5
- STFI20N65M5
- STFI20NM65N
- STFI24NM60N
- STFI26NM60N
- STFI31N65M5
- STFI34NM60N
- STFI4N62K3
- STFI6N65K3
- STFI7N80K5
- STFPC311BTR
- STFV025-10N
- STFV075-10N
- STFW1N105K3
- STFW38N65M5
- STFW40N60M2
- STFW4N150
- STFW69N65M5
- STG3155DTR
- STG3220QTR
- STG3684AUTR
- STG3692QTR
- STG3696EQTR
- STG3820BJR
- STG3P2M10N60B
- STG4210QTR
- STG5123DTR
- STG5682QTR
- STG6384QTR
- STG719STR
- STGB10H60DF
- STGB10NB37LZ
- STGB10NB40LZT4
- STGB10NC60KDT4
- STGB14NC60KDT4
- STGB15H60DF
- STGB19NC60HDT4