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STF20NM60A

N-CHANNEL 650V@Tjmax - 0.25 Ohm - 20A I짼PAK/TO-220/TO-220FP

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

20NM60

20A,600VN-CHANNELSUPER-JUNCTIONMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

F20NM60D

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P20NM60

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P20NM60FD

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P20NM60FP

N-Channel650-V(D-S)SuperJunctionMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

STB20NM60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB20NM60

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB20NM60

N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB20NM60D

N-channel600V-0.26廓-20A-D2PAKFDmesh??PowerMOSFET

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100A

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB20NM60D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF20NM60D

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF20NM60D

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60

N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP20NM60A

N-CHANNEL650V@Tjmax-0.25Ohm-20AI짼PAK/TO-220/TO-220FP

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60FD

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60FD

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP20NM60FP

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    STF20NM60A

  • 制造商:

    STMicroelectronics

  • 功能描述:

    STF20NM60A - Rail/Tube

供应商型号品牌批号封装库存备注价格
ST
22+
TO-220F
7550
绝对原装现货,价格低,欢迎询购!
询价
ST/意法
17+
TO-220
31518
原装正品 可含税交易
询价
ST
23+
TO-220F
8795
询价
ST/进口原
17+
TO-220F
6200
询价
ST
17+
TO-220F
1250
原装现货热卖
询价
ST
08+(pbfree)
TO220ISOFULLPACK
8866
询价
ST
23+
TO-220F
5000
专做原装正品,假一罚百!
询价
ST全系列
22+23+
TO-220F
25739
绝对原装正品全新进口深圳现货
询价
23+
N/A
36500
正品授权货源可靠
询价
VB
2019
TO-220FP
55000
绝对原装正品假一罚十!
询价
更多STF20NM60A供应商 更新时间2024-5-13 17:12:00