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P20NM60

N-channel 600V - 0.25廓 - 20A - TO-247 - TO-220/FP - D2/I2PAK MDmesh??Power MOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P20NM60FD

N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET (with FAST DIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

P20NM60FP

N-Channel 650-V (D-S) Super Junction MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

20NM60

20A,600VN-CHANNELSUPER-JUNCTIONMOSFET

UTCYoushun Technology Co., Ltd

友顺友顺科技股份有限公司

F20NM60D

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB20NM60

N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB20NM60

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB20NM60

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STB20NM60D

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STB20NM60D

N-channel600V-0.26廓-20A-D2PAKFDmesh??PowerMOSFET

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,inparticularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100A

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF20NM60A

N-CHANNEL650V@Tjmax-0.25Ohm-20AI짼PAK/TO-220/TO-220FP

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STF20NM60D

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STF20NM60D

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60

IscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP20NM60

N-channel600V-0.25廓-20A-TO-247-TO-220/FP-D2/I2PAKMDmesh??PowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60

N-CHANNEL600V-0.25ohm-20ATO-220/FP/D2PAK/I2PAKMDmeshPowerMOSFET

Features 1.Highdv/dtandavalanchecapabilities 2.100avalanchetested 3.Lowinputcapacitanceandgatecharge 4.Lowgateinputresistance Applications 1.Switchingapplications Description TheMDmesh™isanewrevolutionaryPowerMOSFETtechnologythatassociatesthemultiple

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60A

N-CHANNEL650V@Tjmax-0.25Ohm-20AI짼PAK/TO-220/TO-220FP

DESCRIPTION TheMDmesh™isanewrevolutionaryMOSFETtechnologythatassociatestheMultipleDrainprocesswiththeCompany’sPowerMESH™horizontallayout.Theresultingproducthasanoutstandinglowon-resistance,impressivelyhighdv/dtandexcellentavalanchecharacteristics.Theadoption

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60FD

N-CHANNEL600V-0.26ohm-20ATO-220-TO-220FP-TO-247FDmeshPOWERMOSFET(withFASTDIODE)

Description TheFDmesh™associatesalladvantagesofreducedon-resistanceandfastswitchingwithanintrinsicfast-recoverybodydiode.Itisthereforestronglyrecommendedforbridgetopologies,in particularZVSphase-shiftconverters. ■Highdv/dtandavalanchecapabilities ■100Avalanch

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STP20NM60FD

iscN-ChannelMosfetTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

STP20NM60FP

iscN-ChannelMOSFETTransistor

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

详细参数

  • 型号:

    P20NM60

  • 制造商:

    STMICROELECTRONICS

  • 制造商全称:

    STMicroelectronics

  • 功能描述:

    N-CHANNEL 600V - 0.26ohm - 20A TO-220-TO-220FP-TO-247 FDmesh POWER MOSFET(with FAST DIODE)

供应商型号品牌批号封装库存备注价格
ST
23+
TO220
12000
询价
08+(pbfree)
8866
询价
ST/进口原
17+
TO-220
6200
询价
ST
23+
TO220
1778
专业优势供应
询价
ST
22+23+
TO-220
40402
绝对原装正品全新进口深圳现货
询价
ST
21+
TO-220
12588
原装正品,自己库存 假一罚十
询价
VB
2019
TO-220
55000
绝对原装正品假一罚十!
询价
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
ST
20+
TO-220
36200
全新原装现货/放心购买
询价
S
23+
TO-220
10000
公司只做原装正品
询价
更多P20NM60供应商 更新时间2024-5-29 17:11:00