首页 >SPD30N03S2>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
N-Channel MOSFET Transistor •DESCRITION •Superiorthermalresistance •FEATURES •Staticdrain-sourceon-resistance: RDS(on)≤10mΩ •Enhancementmode: •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
OptiMOSa Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOSa Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOS Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •LowOn-ResistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOS Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •LowOn-ResistanceRDS(on) •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOS Power-Transistor Feature •N-Channel •Enhancementmode •LogicLevel •ExcellentGateChargexRDS(on)product(FOM) •Superiorthermalresistance •175°Coperatingtemperature •Avalancherated •dv/dtrated •Pb-freeleadplating;RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-Channel 30-V (D-S) MOSFET FEATURES •TrenchFET®PowerMOSFET •100RgandUISTested •ComplianttoRoHSDirective2011/65/EU APPLICATIONS •OR-ing •Server •DC/DC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level Avalanche rated | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS Power-Transistor Feature N-Channel Enhancement mode | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon | ||
OptiMOS Power-Transistor Feature Enhancement mode Logic Level | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | Infineon |
详细参数
- 型号：
SPD30N03S2
- 制造商：
Infineon Technologies AG
- 功能描述：
N-KANAL POWER MOS - Tape and Reel
- 功能描述：
MOSFET N-CH 30V 30A TO252-3
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon Technologies |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
询价 | ||
Infineon Technologies |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
8000 |
只做原装现货 |
询价 | ||
INFINE0N |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
询价 | ||
23+ |
N/A |
85200 |
正品授权货源可靠 |
询价 | |||
Infineon |
23+ |
DPAK |
12300 |
全新原装真实库存含13点增值税票! |
询价 | ||
I |
2020+ |
TO-252 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
INFINE0N |
20+ |
TO-252 |
90000 |
原装正品现货/价格优势 |
询价 | ||
Infineon Technologies |
21+ |
PG-TO252-3 |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
询价 | ||
VBsemi/台湾微碧 |
20+ |
TO-252 |
10001 |
询价 | |||
INFINEON |
1503+ |
TO252-3 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
询价 |
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相关库存
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