首页 >RSR030N06HZG>规格书列表
| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
RSR030N06HZG | Nch 60V 3A Small Signal MOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | |
N-ChannelPowerTrench짰MOSFET60V,193A,3.2mW | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrench짰MOSFET60V,100A,3m? | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-ChannelPowerTrench짰MOSFET60V,193A,3.2m? | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-ChannelPowerTrench짰MOSFET60V,195A,3.1m | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,DualN-Channel,DUALSO-8FL60V,29.7m,19A Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD030N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Ha | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
Nch60V3APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
4VDriveNchMOSFET ■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
Nch60V3APowerMOSFET | ROHMRohm Semiconductor 罗姆罗姆半导体集团 | ROHM | ||
N-Channel60-V(D-S)MOSFET FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM/罗姆 |
20+ |
SOT-23 |
120000 |
原装正品 可含税交易 |
询价 | ||
ROHM/罗姆 |
SOT23 |
7906200 |
询价 | ||||
ROHM/罗姆 |
23+ |
TSMT3 |
100586 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
ROHM |
1844+ |
TSMT6 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
询价 | ||
HAMOS/汉姆 |
23+ |
SMD |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
HAMOS/汉姆 |
2022 |
SMD |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
ROHM/罗姆 |
22+ |
24000 |
询价拨打15919799957全天在线 |
询价 | |||
ROHM/罗姆 |
2021+ |
SOT-23 |
1000 |
13632880263 |
询价 | ||
ROHM/罗姆 |
TSMT3 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
HAMOS/汉姆 |
23+ |
NA/ |
33250 |
原厂直销,现货供应,账期支持! |
询价 |
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