首页 >FDI030N06>规格书列表

零件编号下载&订购功能描述制造商&上传企业LOGO

FDI030N06

isc N-Channel MOSFET Transistor

FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDI030N06

N-Channel PowerTrench짰 MOSFET 60V, 193A, 3.2mW

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDMS030N06B

N-ChannelPowerTrench짰MOSFET60V,100A,3m?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP030N06

N-ChannelPowerTrench짰MOSFET60V,193A,3.2m?

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

FDP030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

FDP030N06B

N-ChannelPowerTrench짰MOSFET60V,195A,3.1m

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

NTMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NTTFS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO-8FL60V,29.7m,19A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD030N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Ha

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

NVTFWS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

ONSEMION Semiconductor

安森美半导体安森美半导体公司

RSR030N06

Nch60V3APowerMOSFET

ROHMRohm Semiconductor

罗姆罗姆半导体集团

RSR030N06

4VDriveNchMOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

ROHMRohm Semiconductor

罗姆罗姆半导体集团

RSR030N06FRA

Nch60V3APowerMOSFET

ROHMRohm Semiconductor

罗姆罗姆半导体集团

RSR030N06HZG

Nch60V3ASmallSignalMOSFET

ROHMRohm Semiconductor

罗姆罗姆半导体集团

RSR030N06TL

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

详细参数

  • 型号:

    FDI030N06

  • 功能描述:

    MOSFET NCH 60V 3.0Mohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
onsemi
24+
I2PAK(TO-262)
30000
晶体管-分立半导体产品-原装正品
询价
FAIRCHILD/仙童
2022+
TO262
1630
原厂授权代理 价格绝对优势
询价
onsemi(安森美)
23+
TO-262
8498
支持大陆交货,美金交易。原装现货库存。
询价
Fairchild
23+
I2-PAK
7750
全新原装优势
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
ONSemiconductor
18+
NA
3000
进口原装正品优势供应QQ3171516190
询价
FAIRCHILD
22+23+
TO262
8374
绝对原装正品全新进口深圳现货
询价
FSC
1844+
TO262
9852
只做原装正品假一赔十为客户做到零风险!!
询价
23+
N/A
85200
正品授权货源可靠
询价
三年内
1983
纳立只做原装正品13590203865
询价
更多FDI030N06供应商 更新时间2024-5-21 14:14:00