NVMFD030N06C

MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD030N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Ha

NVMFD030N06CT1G

MOSFET - Power, Dual N-Channel, DUAL SO-8FL 60 V, 29.7 m, 19 A

Features •SmallFootprint(5x6mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVMFWD030N06C−WettableFlankOptionforEnhancedOptical Inspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Free,Ha

FDI030N06

N-ChannelPowerTrench짰MOSFET60V,193A,3.2mW

FDI030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=136A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.2mΩ(Max) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·Designedforuseinswitchm

FDMS030N06B

N-ChannelPowerTrench짰MOSFET60V,100A,3m?

FDP030N06

N-ChannelPowerTrench짰MOSFET60V,193A,3.2m?

FDP030N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=195A@TC=25℃ ·DrainSourceVoltage :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=3.1mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc

FDP030N06B

N-ChannelPowerTrench짰MOSFET60V,195A,3.1m

NTMFD030N06C

MOSFET-Power,DualN-Channel,DUALSO8FL60V,29.7m,19A

NTTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

NTTFS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •TheseDevicesarePb−Free,HalogenFree/BFRFreeandareRoHS Compliant TypicalApplications •PowerTools,BatteryOperatedVacuum

NVTFS030N06C

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

NVTFS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

NVTFWS030N06CTAG

MOSFET-Power,SingleN-Channel,8FL60V,29.7m,19A

Features •SmallFootprint(3.3x3.3mm)forCompactDesign •LowRDS(on)toMinimizeConductionLosses •LowQGandCapacitancetoMinimizeDriverLosses •NVTFWS030N06C−WettableFlankOptionforEnhancedOpticalInspection •AEC−Q101QualifiedandPPAPCapable •TheseDevicesarePb−Fre

RSR030N06

Nch60V3APowerMOSFET

RSR030N06

4VDriveNchMOSFET

■MOSFETs ●SmallSignalMOSFETSeries ●MiddlePowerMOSFETSeries ●PowerMOSFETSeries ■SelectorGuideforAutomotiveMOSFETs(AEC-Q101) ■BipolarTransistors(Surfacemounttype) ■TransistorArray ■ComplexBipolarTransistors ■DigitalTransistors ■ComplexDigitalTransis

RSR030N06FRA

Nch60V3APowerMOSFET

RSR030N06HZG

Nch60V3ASmallSignalMOSFET

RSR030N06TL

N-Channel60-V(D-S)MOSFET

FEATURES •Halogen-freeAccordingtoIEC61249-2-21 Available •TrenchFET®PowerMOSFET •100RgTested •100UISTested APPLICATIONS •BatterySwitch •DC/DCConverter