| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs TheseareN-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregulators,s | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR DESCRIPTION TheUTC15N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON),lowgatechargeandoperationwithlowgatevoltages.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications. FEATURES *RDS(ON) | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
FastSwitching | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
15A,60VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
60VN-ChannelEnhancementModeMOSFET | PANJITPANJIT International Inc. 强茂強茂股份有限公司 | PANJIT | ||
N-ChannelMOSFET55V,15A,0.090廓 | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
N-ChannelEnhancementModeFieldEffectTransistor Features •15A,60V(SeeNote),RDS(on) | HuashanHuashan Electronic Devices Co 华汕电子器件 | Huashan | ||
TMOSPOWERFET15AMPERES | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=15A@TC=25℃ ·DrainSourceVoltage- :VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.12Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCco | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET15AMPERES TMOSV™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.18OHM TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesth | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
TMOSPOWERFET15AMPERES60VOLTSRDS(on)=0.085OHM TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTS TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
TMOSPOWERFET15AMPERES60VOLTS TMOSVPowerFieldEffectTransistorDPAKforSurfaceMount N–ChannelEnhancement–ModeSiliconGate TMOSVisanewtechnologydesignedtoachieveanon–resistanceareaproductaboutone–halfthatofstandardMOSFETs.Thisnewtechnologymorethandoublesthepresentcelldensityofour50and6 | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-Channel60V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI |
详细参数
- 型号：
RFD15N06
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
Harris Corporation
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
22+ |
TO-252 |
2500 |
只做原装进口 免费送样!! |
询价 | ||
INTERSIL |
TO252 |
7906200 |
询价 | ||||
INTERSIL |
2017+ |
TO-252 |
25899 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
INTERSIL |
360000 |
原厂原装 |
1305 |
询价 | |||
FAIRCHILD |
07+ |
TO-252 |
36800 |
询价 | |||
INTERSI |
23+ |
TO-252 |
8650 |
受权代理!全新原装现货特价热卖! |
询价 | ||
HAR |
23+ |
RFD15N06LESM |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
23+ |
N/A |
38160 |
正品授权货源可靠 |
询价 | |||
INTERSIL |
14+PBF |
TO-252 |
2500 |
原装正品现货,可开发票,假一赔十 |
询价 | ||
INTERSIL |
21+ |
TO-252 |
35200 |
一级代理/放心采购 |
询价 |
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相关库存
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