首页 >RFD16N05LSM>规格书列表
零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
---|---|---|---|---|
RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | |
RFD16N05LSM | 16A, 50V, 0.047 Ohm, Logic Level, N-Channel Power MOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
RFD16N05LSM | N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓 TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | |
RFD16N05LSM | MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | |
RFD16N05LSM | N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | |
N-Channel Logic Level Power MOSFET 50V, 16A, 47 m廓 TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
MOSFET - Power, N-Channel, Logic Level 50 V, 16 A, 47 m TheseareN−ChannellogiclevelpowerMOSFETsmanufactured usingtheMegaFETprocess.Thisprocess,whichusesfeaturesizes approachingthoseofLSIintegratedcircuitsgivesoptimumutilization ofsilicon,resultinginoutstandingperformance.Theyweredesigned forusewithlogiclevel(5V | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
60V N-Channel MOSFET Features VDS(V)=60V RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
N-Channel 6 0-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel 60-V (D-S) MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
N-Channel60-V(D-S)MOSFET | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体(台湾)有限公司 | VBSEMI | ||
16A,50V,0.047Ohm,N-ChannelPowerMOSFETs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
N-Channel5.5VDualPowerMOSFET | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
60VN-ChannelMOSFET Features VDS(V)=60V RDS(ON) | UMWUMW 友台友台半导体 | UMW | ||
16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,50V,0.047Ohm,N-ChannelPowerMOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,50V,0.047Ohm,N-ChannelPowerMOSFETs | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
16A,50V,0.047Ohm,N-ChannelPowerMOSFETs TheRFD16N05andRFD16N05SMN-channelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplication | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild | ||
16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | IntersilIntersil Corporation 瑞萨电子瑞萨电子株式会社 | Intersil | ||
16A,50V,0.047Ohm,LogicLevel,N-ChannelPowerMOSFETs TheseareN-ChannellogiclevelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogiclevel(5V)dri | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | Fairchild |
详细参数
- 型号:
RFD16N05LSM
- 功能描述:
MOSFET TO-252AA N-Ch Power
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶体管极性:
N-Channel
- 汲极/源极击穿电压:
650 V
- 闸/源击穿电压:
25 V
- 漏极连续电流:
130 A 电阻汲极/源极
- RDS(导通):
0.014 Ohms
- 配置:
Single
- 安装风格:
Through Hole
- 封装/箱体:
Max247
- 封装:
Tube
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FSC |
40 |
全新原装!优势库存热卖中! |
询价 | ||||
ON/安森美 |
TO252 |
7906200 |
询价 | ||||
FAIRCHILD/仙童 |
24+ |
TO-252 |
154573 |
明嘉莱只做原装正品现货 |
询价 | ||
仙童 |
05+ |
TO-252 |
12000 |
原装进口 |
询价 | ||
FAI |
6300 |
询价 | |||||
哈里斯 |
2017+ |
TO-252 |
44558 |
深圳香港代理原装现货库存(美国-日本-台湾)可开正规增 |
询价 | ||
FSC |
17+ |
TO-252 |
6200 |
询价 | |||
FAIRCHILD |
360000 |
原厂原装 |
1305 |
询价 | |||
Fairchild |
23+ |
TO-252 |
7750 |
全新原装优势 |
询价 | ||
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 |
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