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MTP12N06

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=12A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.2Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

无锡固电无锡固电半导体股份有限公司

MTP12N06

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

MotorolaMotorola, Inc

摩托罗拉

MTP12N06EZL

TMOSPOWERFET12AMPERES60VOLTSRDS(on)=0.180OHM

MotorolaMotorola, Inc

摩托罗拉

RFD12N06

60VN-ChannelMOSFET

Features •UltraLowOn-Resistance -RDS(ON)

UMWUMW

友台友台半导体

RFD12N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features •UltraLowOn-Resistance -rDS(ON)=0.063Ω,VGS=10V -rDS(ON)=0.071Ω,VGS=5V •SimulationModels -TemperatureCompensatedPSPICE®andSABER© ElectricalModels -SpiceandSABER©ThermalImpedanceModels -www.fairchildsemi.com •PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半导体飞兆/仙童半导体公司

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

IntersilIntersil Corporation

瑞萨电子瑞萨电子株式会社

RFP12N06RLE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SDP12N06

N-Channel650V(D-S)PowerMOSFET

VBSEMIVBsemi Electronics Co. Ltd

微碧半导体微碧半导体(台湾)有限公司

SG12N06DP

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06DP

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06DT

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06DT

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06P

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

SG12N06P

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06T

DiscreteIGBTs

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

SG12N06T

DiscreteIGBTs

SIRECTSirectifier Global Corp.

矽莱克半导体矽莱克半导体有限公司(深圳)

STD12N06

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODEPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.1Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100oC ■LOWGATECHARGE ■HIGHCURRENTCAPABILITY ■175°COPERATINGTEMPERATURE ■APPLICATIONORIENTED CHARACTERIZATION ■THR

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

STD12N06L

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR

N-CHANNELENHANCEMENTMODELOWTHRESHOLDPOWERMOSTRANSISTOR ■TYPICALRDS(on)=0.115Ω ■AVALANCHERUGGEDTECHNOLOGY ■100AVALANCHETESTED ■REPETITIVEAVALANCHEDATAAT100°C ■LOWGATECHARGE ■LOGICLEVELCOMPATIBLEINPUT ■175oCOPERATINGTEMPERATURE ■APPLICATIONORIENTED CH

STMICROELECTRONICSSTMicroelectronics

意法半导体意法半导体(ST)集团

详细参数

  • 型号:

    RFD12N06RL

  • 功能描述:

    MOSFET 60V/12a/0.135Ohm NCh Logic Level

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶体管极性:

    N-Channel

  • 汲极/源极击穿电压:

    650 V

  • 闸/源击穿电压:

    25 V

  • 漏极连续电流:

    130 A 电阻汲极/源极

  • RDS(导通):

    0.014 Ohms

  • 配置:

    Single

  • 安装风格:

    Through Hole

  • 封装/箱体:

    Max247

  • 封装:

    Tube

供应商型号品牌批号封装库存备注价格
INTERSIL/FSC
23+
TO-251
28610
询价
FAI
125
询价
FAIRCHILD
23+
SOT252
7780
全新原装优势
询价
FAIRCHILD
23+
NA
19960
只做进口原装,终端工厂免费送样
询价
HAR
23+
RFD12N06RLE
13528
振宏微原装正品,假一罚百
询价
23+
N/A
36000
正品授权货源可靠
询价
FAIRCHILD
2023+
80000
一级代理/分销渠道价格优势 十年芯程一路只做原装正品
询价
HARRIS/哈里斯
21+
TO-252
30000
只做正品原装现货
询价
FAIRCHILD/仙童
23+
TO-251
90000
只做原厂渠道价格优势可提供技术支持
询价
F
23+
TO-252
10000
公司只做原装正品
询价
更多RFD12N06RL供应商 更新时间2024-5-21 17:33:00