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RFP12N06RLE中文资料PDF规格书
RFP12N06RLE规格书详情
These N-Channel logic level ESD protected power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor drivers, relay drivers, and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate biases in the 3V to 5V range, thereby facilitating true on-off power control directly from logic circuit supply voltages.
Features
• 12A, 60V
• rDS(ON) = 0.135Ω
• Electrostatic Discharge Protected
• UIS Rating Curve (Single Pulse)
• Design Optimized for 5V Gate Drive
• Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
产品属性
- 型号:
RFP12N06RLE
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
FAIRCHILD |
23+ |
NA |
19960 |
只做进口原装,终端工厂免费送样 |
询价 | ||
HARRIS |
17+ |
TO220/ |
9988 |
只做原装进口,自己库存 |
询价 | ||
原厂 |
23+ |
NA |
5000 |
航宇科工半导体-中国航天科工集团战略合作伙伴! |
询价 | ||
HARRIS |
2023+ |
80000 |
一级代理/分销渠道价格优势 十年芯程一路只做原装正品 |
询价 | |||
HAR |
23+ |
RFP12N06RLE |
13528 |
振宏微原装正品,假一罚百 |
询价 | ||
HARRIS/哈里斯 |
23+ |
NA/ |
75 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
HARRIS(哈利斯) |
20+ |
TO-220 |
3000 |
询价 | |||
HARRIS |
2020+ |
TO-220 |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
HARRIS/哈里斯 |
2048+ |
TO-220 |
9851 |
只做原装正品现货!或订货假一赔十! |
询价 | ||
HARRIS/哈里斯 |
2022 |
TO-220 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 |