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AIKQ120N60CT

LowLossDuoPack:IGBTinTRENCHSTOPTMandFieldstoptechnologywithsoft,fastrecoveryantiparallelEmitterControlleddiode

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IKQ120N60T

Increasedcurrentcapability

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IKQ120N60TA

verytightparameterdistribution

InfineonInfineon Technologies AG

英飞凌英飞凌科技公司

IXGK120N60B

HiPerFASTIGBT

IXYS

IXYS Integrated Circuits Division

IXGR120N60B

HiPerFASTTMIGBTISOPLUS247TM

IXYS

IXYS Integrated Circuits Division

IXGX120N60B

HiPerFASTIGBT

IXYS

IXYS Integrated Circuits Division

IXGX120N60B

HiPerFASTIGBTs

IXYS

IXYS Integrated Circuits Division

PJMF120N60EC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:120mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:ITO-220AB-Fpackage Terminals:

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJMH120N60EC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:120mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-247AD-3LDpackage Terminals

PANJITPANJIT International Inc.

强茂強茂股份有限公司

PJMP120N60EC

600VN-ChannelSuperJunctionMOSFET

Feature: RDS(ON)Max,VGS@10V:120mΩ Easytouse/drive HighSpeedSwitchingandLowRDS(ON) 100AvalancheTested 100RgTested LeadfreeincompliancewithEURoHS2.0 GreenmoldingcompoundasperIEC61249standard MechanicalData Case:TO-220AB-Lpackage Terminals:

PANJITPANJIT International Inc.

强茂強茂股份有限公司

SIHA120N60E

ESeriesPowerMOSFET

FEATURES •4thgenerationEseriestechnology •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

VishayVishay Siliconix

威世科技

SIHB120N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技

SIHG120N60E

ESeriesPowerMOSFET

FEATURES •4thgenerationEseriestechnology •Lowfigure-of-merit(FOM)RonxQg •Loweffectivecapacitance(Co(er)) •Reducedswitchingandconductionlosses •Avalancheenergyrated(UIS) •Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 AP

VishayVishay Siliconix

威世科技

SIHH120N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技

SIHP120N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技

供应商型号品牌批号封装库存备注价格
国产
900
询价
23+
N/A
46180
正品授权货源可靠
询价
NIKO-微电子
24+25+/26+27+
TO-220-3
78800
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
ST/进口原
17+
TO-220
6200
询价
ST
20+
TO-220
38560
原装优势主营型号-可开原型号增税票
询价
S
23+
TO-220
10000
公司只做原装正品
询价
ST/意法
23+
TO-220
50000
全新原装正品现货,支持订货
询价
ST/意法
2022
TO-220
80000
原装现货,OEM渠道,欢迎咨询
询价
S
TO-220
22+
6000
十年配单,只做原装
询价
S
23+
TO-220
6000
原装正品,支持实单
询价
更多P120N60供应商 更新时间2024-5-12 17:30:00