NJVMJD243T4G

Complementary Silicon Plastic Power Transistors

NJVMJD243T4G

包装：散装 封装/外壳：TO-252-3，DPak（2 引线 + 接片），SC-63 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 100V 4A DPAK

MJD243T4

NPNSILICONPOWERTRANSISTOR4AMPERES100VOLTS12.5WATTS

...designedforlowvoltage,low–power,high–gainaudioamplifierapplications. •Collector–EmitterSustainingVoltage—VCEO(sus)=100Vdc(Min)@IC=10mAdc •HighDCCurrentGain—hFE=40(Min)@IC=200mAdc =15(Min)@IC=

MJD243T4

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications

MJD243T4

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD243T4G

ComplementarySiliconPlasticPowerTransistors

MJD243T4G

ComplementarySiliconPlasticPowerTransistor

MJD243T4G

ComplementarySiliconPlasticPowerTransistor

ComplementarySiliconPlasticPowerTransistor DPAK−3forSurfaceMountApplications Designedforlowvoltage,low−power,high−gainaudioamplifierapplications. Features •Collector−EmitterSustainingVoltage− VCEO(sus)=100Vdc(Min)@IC =10mAdc •HighDCCur

MJD243T4G

ComplementarySiliconPlasticPowerTransistorDPAK-3forSurfaceMountApplications