Complementary Silicon Plastic Power Transistor

DPAK−3 for Surface Mount Applications

Designed for low voltage, low−power, high−gain audio amplifier applications.

Features

• Collector−Emitter Sustaining Voltage −

VCEO(sus) = 100 Vdc (Min) @ IC

= 10 mAdc

• High DC Current Gain −

hFE = 40 (Min) @ IC

= 200 mAdc

= 15 (Min) @ IC = 1.0 Adc

• Lead Formed for Surface Mount Applications in Plastic Sleeves

(No Suffix)

• Straight Lead Version in Plastic Sleeves (“−1” Suffix)

• Low Collector−Emitter Saturation Voltage −

VCE(sat) = 0.3 Vdc (Max) @ IC

= 500 mAdc

= 0.6 Vdc (Max) @ IC = 1.0 Adc

• High Current−Gain − Bandwidth Product −

fT = 40 MHz (Min) @ IC

= 100 mAdc

• Annular Construction for Low Leakage −

ICBO = 100 nAdc @ Rated VCB

• Epoxy Meets UL 94 V−0 @ 0.125 in

• ESD Ratings: Human Body Model, 3B > 8000 V

Machine Model, C > 400 V

• Pb−Free Packages are Available

MJD243T4属于分立半导体产品 > 晶体管 - 双极性晶体管（BJT）- 单个。安森美半导体公司制造生产的MJD243T4晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。