| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE | NECRenesas Electronics America 瑞萨瑞萨科技有限公司 | NEC | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe RF Transistor for Low Noise, High-Gain FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG) | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON SiGe RF TWIN TRANSISTOR NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES •2differentbuilt-intransistors(2SC5435,NESG2107M33) Q1:Highgaintransistor fT=12.0GHzTYP.,S21e2=11dBTYP.@VCE=3V,IC=10mA,f=2GHz Q2:Built-inl | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON SiGe RF TWIN TRANSISTOR NPNSILICON+SiGeRFTRANSISTOR(WITH2DIFFERENTELEMENTS) INA6-PINSUPERLEAD-LESSMINIMOLD(1007PKG) FEATURES •2differentbuilt-intransistors(2SC5436,NESG2107M33) Q1:Highgaintransistor fT=12GHzTYP.,S21e2=9.0dBTYP.@VCE=1V,IC=10mA,f=2GHz Q2:Built-inlo | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR HIGHFREQUENCY,LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •ThedeviceisanidealchoiceforOSC,lownoise,high-gainamplification •SiGetechnologyadopted •3-pinsuperlead-lessminimold(M33,0804PKG)packa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR HIGHFREQUENCY,LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •ThedeviceisanidealchoiceforOSC,lownoise,high-gainamplification •SiGetechnologyadopted •3-pinsuperlead-lessminimold(M33,0804PKG)packa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR HIGHFREQUENCY,LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •ThedeviceisanidealchoiceforOSC,lownoise,high-gainamplification •SiGetechnologyadopted •3-pinsuperlead-lessminimold(M33,0804PKG)packa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SILICON GERMANIUM RF TRANSISTOR NPNSiGeRFTRANSISTORFOR HIGHFREQUENCY,LOWNOISE,HIGH-GAINAMPLIFICATION 3-PINSUPERLEAD-LESSMINIMOLD(M33,0804PKG) FEATURES •ThedeviceisanidealchoiceforOSC,lownoise,high-gainamplification •SiGetechnologyadopted •3-pinsuperlead-lessminimold(M33,0804PKG)packa | RENESASRenesas Electronics America 瑞萨瑞萨科技有限公司 | RENESAS | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) | CEL California Eastern Laboratories | CEL | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) | CEL California Eastern Laboratories | CEL | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) | CEL California Eastern Laboratories | CEL | ||
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG) | CEL California Eastern Laboratories | CEL | ||
NECs NPN SILICON TRANSISTOR | CEL California Eastern Laboratories | CEL | ||
NECs NPN SILICON TRANSISTOR | CEL California Eastern Laboratories | CEL | ||
NECs NPN SILICON TRANSISTOR | CEL California Eastern Laboratories | CEL | ||
包装：卷带（TR） 封装/外壳：3-SMD，扁平引线 类别：分立半导体产品 晶体管 - 双极（BJT）- 射频 描述：RF TRANS NPN 5V 10GHZ 3SMINMOLD | CEL California Eastern Laboratories | CEL |
详细参数
- 型号：
NESG2107
- 制造商：
NEC
- 制造商全称：
NEC
- 功能描述：
NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
SOT523 |
7906200 |
询价 | ||||
RENESAS |
23+ |
SC-90 |
63000 |
原装正品现货 |
询价 | ||
NEC |
23+ |
SOT-23 |
50000 |
全新原装正品现货,支持订货 |
询价 | ||
NEC |
21+ |
SOT-23 |
10000 |
原装现货假一罚十 |
询价 | ||
NEC |
2022 |
SOT-23 |
80000 |
原装现货,OEM渠道,欢迎咨询 |
询价 | ||
RENESAS/瑞萨 |
SOT-523 |
27000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
NEC |
24+23+ |
SOT-23 |
12580 |
16年电子元件现货供应商 终端BOM表可配单提供样品 |
询价 | ||
RENESAS/瑞萨 |
SOT-523 |
90000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
NEC |
23+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
询价 | ||
RENESAS-瑞萨 |
24+25+/26+27+ |
SOT-523 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 |
相关规格书
更多- NESG210719-A
- NESG210719-T1-A
- NESG2107M33(A)
- NESG2107M33-T3-A
- NESG210833-A
- NESG210833-T1B-A
- NESG220033-A
- NESG220033-T1B-A
- NESG220034-A
- NESG220034-T1-A
- NESG240033-A
- NESG240033-T1B-A
- NESG240034-A
- NESG240034-T1-A
- NESG250134-EV09
- NESG250134-EVPW04
- NESG250134-T1-AZ
- NESG260234-AZ
- NESG260234-EVPW04
- NESG260234-T1
- NESG270034
- NESG270034-EV09-AZ
- NESG270034-T1AZ
- NESG303100G
- NESG3031M05-A
- NESG3031M05-EVNF24
- NESG3031M05-EVNF58-A
- NESG3031M05-T1-A
- NESG3031M14
- NESG3031M14-T3
- NESG3032M14
- NESG3032M14-EVNF24
- NESG3032M14-T3-A
- NESG3033M14-A
- NESG3033M14-T3A
- NESG4030M14
- NESG4030M14-T3
- NESG426CT
- NESG7030M04
- NESG7030M04-EV24-A
- NESG7030M04-EVDB-A
- NESG7030M04-T2-A
- NESM026AT
- NESR505DT
- NESW005T
相关库存
更多- NESG210719-T1
- NESG2107M33
- NESG2107M33-A
- NESG210833
- NESG210833-T1B
- NESG220033
- NESG220033-T1B
- NESG220034
- NESG220034-T1
- NESG240033
- NESG240033-T1B
- NESG240034
- NESG240034-T1
- NESG250134-AZ
- NESG250134-EV09-AZ
- NESG250134-T1AZ
- NESG260234
- NESG260234-EV09
- NESG260234-EVPW04-A
- NESG260234-T1-AZ
- NESG270034-AZ
- NESG270034-T1
- NESG270034-T1-AZ
- NESG3031M05
- NESG3031M05-EVNF16
- NESG3031M05-EVNF58
- NESG3031M05-T1
- NESG3031M05-T2A
- NESG3031M14-A
- NESG3031M14-T3-A
- NESG3032M14-A
- NESG3032M14-T3
- NESG3033M14
- NESG3033M14-T3
- NESG3033M14-T3-A
- NESG4030M14-A
- NESG4030M14-T3-A
- NESG505CT
- NESG7030M04-A
- NESG7030M04-EV58-A
- NESG7030M04-T2
- NESM026A
- NESMC07T
- NESSCAP
- NESW007A
