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NESG210719

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NESG210719

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NESG210719

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Laboratories

CEL

NESG210719-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NESG210719-T1

NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

FEATURES •IDEALFOROSC.,HIGH-GAINAMPLIFICATION APPLICATIONS •HIGHBREAKDOWNVOLTAGETECHNOLOGYFOR SiGeTRANSISTOR •3-PINSUPERMINIMOLD(19)PACKAGE

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NEC

NESG210719-T1

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NESG210719-T1-A

NPN SiGe RF Transistor for Low Noise, High-Gain

FEATURES •TheNESG210719isanidealchoiceforOSC,lownoise,high-gainamplification •HighbreakdownvoltagetechnologyforSiGeTr. •3-pinultrasuperminimold(19,1608PKG)

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

RENESAS

NESG210719-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Laboratories

CEL

NESG210719-T1

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Laboratories

CEL

NESG210719-T1-A

NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN Amplification 3-Pin Ultra Super Minimold (19, 1608 PKG)

CEL

California Eastern Laboratories

CEL

详细参数

  • 型号:

    NESG210719

  • 制造商:

    NEC

  • 制造商全称:

    NEC

  • 功能描述:

    NECs NPN SiGe TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION

供应商型号品牌批号封装库存备注价格
RENESAS/瑞萨
SOT523
7906200
询价
RENESAS
23+
SC-90
63000
原装正品现货
询价
23+
N/A
46280
正品授权货源可靠
询价
NEC
23+
SOT-23
50000
全新原装正品现货,支持订货
询价
NEC
21+
SOT-23
10000
原装现货假一罚十
询价
NEC
2022
SOT-23
80000
原装现货,OEM渠道,欢迎咨询
询价
RENESAS/瑞萨
SOT-523
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
22+21+
SOT-23
56314
16年电子元件现货供应商 终端BOM表可配单提供样品
询价
RENESAS/瑞萨
SOT-523
90000
集团化配单-有更多数量-免费送样-原包装正品现货-正规
询价
NEC
23+
NA/
6250
原装现货,当天可交货,原型号开票
询价
更多NESG210719供应商 更新时间2024-4-27 17:06:00