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NESG2031M16

HIGHFREQUENCYTRANSISTOR

CEL

California Eastern Laboratories

NESG2031M16

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16-A

NPNSILICONGERMANIUMRFTRANSISTOR

NPNSiGeRFTRANSISTORFOR LOWNOISE,HIGH-GAINAMPLIFICATION 6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.@

RENESASRenesas Electronics America

瑞萨瑞萨科技有限公司

NESG2031M16-A

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG)

NPNSiGeRFTRANSISTORFORLOWNOISE,HIGH-GAINAMPLIFICATION6-PINLEAD-LESSMINIMOLD(M16,1208PKG) FEATURES •Thedeviceisanidealchoiceforlownoise,high-gainamplification NF=0.8dBTYP.,Ga=17.0dBTYP.@VCE=2V,IC=5mA,f=2GHz NF=1.3dBTYP.,Ga=10.0dBTYP.

NECRenesas Electronics America

瑞萨瑞萨科技有限公司

供应商型号品牌批号封装库存备注价格
6-PINM
23+
NA
15659
振宏微专业只做正品,假一罚百!
询价
CEL
17+
原厂原装
5000
原装正品
询价
RENESAS/瑞萨
22+
SOT-563
9600
原装现货,优势供应,支持实单!
询价
RENESAS-瑞萨
24+25+/26+27+
SOT-563
57500
一一有问必回一特殊渠道一有长期订货一备货HK仓库
询价
RENESAS/瑞萨
23+
SOT-563
50000
原装正品 支持实单
询价
NEC
22+
SOT563
28600
只做原装正品现货假一赔十一级代理
询价
NEC
21+
SOT563
50000
全新原装正品现货,支持订货
询价
NEC/Renesas Electronics Americ
21+
SOT563
10000
优势代理渠道,原装正品,可全系列订货开增值税票
询价
NEC
SOT563
27000
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
NEC
04+
SOT563
10000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
询价