首页>NESG2031M16>规格书详情
NESG2031M16中文资料PDF规格书
NESG2031M16规格书详情
NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PKG)
FEATURES
• The device is an ideal choice for low noise, high-gain amplification
NF = 0.8 dB TYP., Ga = 17.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 2 GHz
NF = 1.3 dB TYP., Ga = 10.0 dB TYP. @ VCE = 2 V, IC = 5 mA, f = 5.2 GHz
• Maximum stable power gain: MSG = 21.5 dB TYP. @ VCE = 3 V, IC = 20 mA, f = 2 GHz
• High breakdown voltage technology for SiGe Tr. adopted: VCEO (absolute maximum ratings) = 5.0 V
• 6-pin lead-less minimold (M16, 1208 PKG)
产品属性
- 型号：
NESG2031M16
- 功能描述：
射频硅锗晶体管 RO 551-NESG2031M16-A
- RoHS：
否
- 制造商：
Infineon Technologies 发射极 - 基极电压
- 封装：
Reel
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
RENESAS/瑞萨 |
23+ |
SOT-523 |
54258 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
询价 | ||
NEC |
SOT563 |
30000 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
询价 | |||
6-PINM |
23+ |
NA |
15659 |
振宏微专业只做正品,假一罚百! |
询价 | ||
NEC |
589220 |
16余年资质 绝对原盒原盘 更多数量 |
询价 | ||||
NEC-日本电气 |
24+25+/26+27+ |
6-PIM |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
询价 | ||
NEC |
2008++ |
6-PINM |
16200 |
新进库存/原装 |
询价 | ||
RENESAS/瑞萨 |
22+ |
SOT-563 |
9600 |
原装现货,优势供应,支持实单! |
询价 | ||
NEC |
22+ |
6-PINM |
10000 |
原装正品优势现货供应 |
询价 | ||
CEL |
16+ |
SOT-523 |
15000 |
鍏ㄦ柊鍘熻鐜拌揣/浠锋牸鍙皥! |
询价 | ||
CEL |
2022+ |
SOT-523 |
20000 |
只做原装进口现货.假一罚十 |
询价 |
