| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
TMOSPOWERFET2.0AMPERES600VOLTS | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
HighEnergyPowerFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
N-ChannelEnhancementModePowerMOSFET | CYSTEKECCystech Electonics Corp. 全宇昕科技全宇昕科技股份有限公司 | CYSTEKEC | ||
TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS TMOSE-FET™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=2A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-Channel650V(D-S)MOSFET FEATURES •LowGateChargeQgResultsinSimpleDrive Requirement •ImprovedGate,AvalancheandDynamicdV/dt Ruggedness •FullyCharacterizedCapacitanceandAvalancheVoltage andCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
TMOSPOWERFET2.0AMPERES600VOLTSRDS(on)=3.8OHMS TMOSE-FET™PowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandh | MotorolaMotorola, Inc 摩托罗拉 | Motorola | ||
PowerFieldEffectTransistor | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelEnhancement-ModeSiliconGate TMOSE−FETPowerFieldEffectTransistor N−ChannelEnhancement−ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage−blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE−FETisdesignedtowithstandhi | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
N-ChannelMOSFET | KEXINGUANGDONG KEXIN INDUSTRIAL CO.,LTD 科信电子广东科信实业有限公司 | KEXIN | ||
2.0A600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
2.0A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
2.0A600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
2.0A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
2.0A600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
2.0A600VN-CHANNELPOWERMOSFET | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ | ||
2.0A600VN-CHANNELPOWERMOSFET FEATURES RDS(ON)@VGS=10V UltraLowgatecharge(typical9.0nC) Lowreversetransfercapacitance(CRSS=typical5.0pF) Fastswitchingcapability Avalancheenergyspecified Improveddv/dtcapability,highruggedness | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | DGNJDZ |
详细参数
- 型号：
MTA2N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-220AB |
60000 |
绝对原装正品现货,假一罚十 |
询价 | ||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
23+ |
TO-220F |
6893 |
询价 | |||
MOT |
N/A |
1116 |
询价 | ||||
ON |
24+ |
TO220 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
49400 |
正品授权货源可靠 |
询价 | |||
ON/安森美 |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
询价 | |||
ON/安森美 |
23+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
ON/安森美 |
23+ |
NA |
9904 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
询价 | ||
ON |
TO220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
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