| 零件编号 | 下载&订购 | 功能描述 | 制造商&上传企业 | LOGO |
|---|---|---|---|---|
2Amps,600VoltsN-CHANNELMOSFET DESCRIPTION TheUTC2N60isahighvoltagepowerMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsin | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
N2Amps竊?00VoltsN-ChannelMOSFET Description TheET2N60N-CeannelenhancementmodesilicongatepowerMOSFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,switchingconverters,solenoid,motordrivers,relaydrivers. Features ●RDS(ON)=5.00Ω@VGS=10V ●Lowgatecharge | ESTEKEstek Electronics Co. Ltd Estek Electronics Co. Ltd | ESTEK | ||
2Amps,600/650VoltsN-CHANNELPOWERMOSFET TheUTC2N60isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowerupplies,PWM | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
600VN-ChannelPowerMOSFET Features ●RDS(ON) | DYELECDIYI Electronic Technology Co., Ltd. 迪一电子山东迪一电子科技有限公司 | DYELEC | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
2A600VN-channelEnhancementModePowerMOSFET | WXDHJiangsu Donghai Semiconductor Technology Co.,Ltd 东海半导体江苏东海半导体科技有限公司 | WXDH | ||
PowerMOSFET FEATURES •LowGateChargeQgResultsinSimpleDriveRequirement •ImprovedGate,AvalancheandDynamicdV/dtRuggedness •FullyCharacterizedCapacitanceandAvalancheVoltageandCurrent •ComplianttoRoHSdirective2002/95/EC | VBSEMIVBsemi Electronics Co. Ltd 微碧半导体微碧半导体（台湾）有限公司 | VBSEMI | ||
2A,600VN-CHANNELPOWERMOSFET | UTCYoushun Technology Co., Ltd 友顺友顺科技股份有限公司 | UTC | ||
2Amps,600VoltsN-CHANNELMOSFET FEATURE ●2A,600V,RDS(ON)=4Ω@VGS=10V/1A ●Lowgatecharge ●LowCiss ●Fastswitching ●100avalanchetested ●Improveddv/dtcapability | CHONGQINGCHONGQING PINGYANG ELECTRONICS CO.,LTD 重庆平伟实业重庆平伟实业股份有限公司 | CHONGQING | ||
TO-251Plastic-EncapsulateMOSFET N-ChannelMOSFET Features ●RobustHighVoltageTermination ●AvalancheEnergySpecified ●DiodeisCharacterizedforUseinBridgeCircuits ●IDSSandVDS(on)SpecifiedatElevatedTemperature | HDSEMIJiangsu High diode Semiconductor Co., Ltd 苏海德半导体苏海德半导体有限公司 | HDSEMI | ||
N-CHANNELMOSFET DESCRIPTION 2N602N65isahighvoltageMOSFETandisdesignedtohavebettercharacteristics,suchasfastswitchingtime,lowgatecharge,lowon-stateresistanceandhaveahighruggedavalanchecharacteristics.ThispowerMOSFETisusuallyusedathighspeedswitchingapplicationsinpowersu | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣诺电子淄博圣诺电子工程有限公司 | ZSELEC | ||
N-ChannelPowerMOSFET DESCRIPTION Theyaredesignedforuseinapplicationssuchasswitchedmodepowersupplies,DCtoDCconverters,PWMmotorcontrols,bridgecircuitsandgeneralpurposeswitchingapplications. TheNell2N60isathree-terminalsilicondevicewithcurrentconductioncapabilityof2A,fastswitchi | NELLSEMINell Semiconductor Co., Ltd 尼爾半導體尼爾半導體股份有限公司 | NELLSEMI | ||
FastSwitching •FEATURES •Draincurrent:ID=2A@TC=25℃ •Drainsourcevoltage:VDSS=600V(Min) •Staticdrain-sourceon-resistance:RDS(on)=5.0Ω(Max) •Fastswitching •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperationz •APPLICATIONS •Switch | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
iscN-ChannelMOSFETTransistor | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
N-CHANNELMOSFET | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | ARTSCHIP | ||
N-CHANNELPOWERMOSFET Features ●RDS(ON) | SUNMATESUNMATE electronic Co., LTD 森美特森美特半导体股份有限公司 | SUNMATE |
详细参数
- 型号：
MTA2N60E
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
- 制造商：
ON Semiconductor
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ON/安森美 |
21+ |
TO-220AB |
60000 |
绝对原装正品现货,假一罚十 |
询价 | ||
onsemi(安森美) |
23+ |
- |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
询价 | ||
ON |
23+ |
TO-220F |
6893 |
询价 | |||
MOT |
N/A |
1116 |
询价 | ||||
ON |
2022+ |
TO220 |
5000 |
只做原装公司现货 |
询价 | ||
23+ |
N/A |
49400 |
正品授权货源可靠 |
询价 | |||
ON/安森美 |
标准封装 |
58998 |
一级代理原装正品现货期货均可订购 |
询价 | |||
ON/安森美 |
23+ |
NA |
30000 |
房间原装现货特价热卖,有单详谈 |
询价 | ||
ON/安森美 |
23+ |
NA |
9904 |
电子元器件供应原装现货. 优质独立分销。原厂核心渠道 |
询价 | ||
ON |
TO220 |
68900 |
原包原标签100%进口原装常备现货! |
询价 |
相关规格书
更多- MTA3055E
- MTA306DPC
- MTA306E
- MTA306E04
- MTA306EPC04
- MTA-306F
- MTA30HA
- MTA30HAV
- MTA30HB
- MTA30HBV
- MTA30HC
- MTA30HCV
- MTA30HD
- MTA30HDV
- MTA30HEM
- MTA30HEVM
- MTA30HFM
- MTA30HFVM
- MTA30HGM
- MTA30HGVM
- MTA30SA
- MTA30SAV
- MTA30SB
- MTA30SBV
- MTA30SC
- MTA30SCV
- MTA30SD
- MTA30SDV
- MTA30SE
- MTA30SEV
- MTA30SF
- MTA30SFV
- MTA30SG
- MTA30SGV
- MTA30ZAM
- MTA30ZAVM
- MTA30ZBM
- MTA30ZBVM
- MTA30ZCM
- MTA30ZCVM
- MTA30ZDM
- MTA30ZDVM
- MTA30ZEM
- MTA30ZEVM
- MTA30ZFM
相关库存
更多- MTA306D04
- MTA306DPC04
- MTA-306E
- MTA306EPC
- MTA306F
- MTA306F04
- MTA30HAM
- MTA30HAVM
- MTA30HBM
- MTA30HBVM
- MTA30HCM
- MTA30HCVM
- MTA30HDM
- MTA30HE
- MTA30HEV
- MTA30HF
- MTA30HFV
- MTA30HG
- MTA30HGV
- MTA30N06E
- MTA30SAM
- MTA30SAVM
- MTA30SBM
- MTA30SBVM
- MTA30SCM
- MTA30SCVM
- MTA30SDM
- MTA30SDVM
- MTA30SEM
- MTA30SEVM
- MTA30SFM
- MTA30SFVM
- MTA30SGM
- MTA30ZA
- MTA30ZAV
- MTA30ZB
- MTA30ZBV
- MTA30ZC
- MTA30ZCV
- MTA30ZD
- MTA30ZDV
- MTA30ZE
- MTA30ZEV
- MTA30ZF
- MTA30ZFV
